Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

Metal Stanogermanide Contacts with Enhanced Thermal Stability for High Mobility Germanium-Tin Field-Effect Transistor

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

Alleviation of Fermi-Level Pinning Effect on Metal/Germanium Interface by Insertion of an Ultrathin Aluminum Oxide

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

Studies of Ti- and Ni-Germanide Schottky Contacts on N-Ge(100) Substrates

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Effect Of Platinum Interlayer On The Thermal Stability Improvement Of Nickel Stanogermanide

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Non-Silicon Microelectronics: Germanium and Germanium-Tin Field-Effect Transistors

Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

Enhancing Device Performance with High Electron Mobility GeSn Materials

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Relaxed Germanium-Tin P-Channel Tunneling Field-Effect Transistors Fabricated on Si: Impacts of Sn Composition and Uniaxial Tensile Strain

Ohmic Contact for InP-Based HEMTs

Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence

Enhanced hole mobility of Ge/GeSn pMOSFETs with a GeSnO interface layer and a NiGe Schottky source/drain

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate