Abstract:Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x-rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al2O3 in contrast to HfO2 on SiGe; however, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al2O3/SiGe is investigated using atomic layer deposited (ALD) Al2O3 insertion into or on top of ALD HfO2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al2O3/SiGe and HfO2/SiGe interfaces with the insertion of Al2O3 into or on top of the HfO2 oxide. The data is consistent with the Al2O3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism shows that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This result shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

Chemical Oxide Interfacial Layer for the High-$k$-Last/Gate-Last Integration Scheme

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge

An Improved Pregate Cleaning Process for High-k Gate Dielectric Fabrication

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Engineering High- K/sige Interface with ALD Oxide for Selective GeO X Reduction.

Schottky Barrier Height Reduction for Metal/n-Inp by Inserting Ultra-Thin Atomic Layer Deposited High-K Dielectrics

Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

High-k gate stack Hf x Ti1−x ON/SiO2 for SiC MOS devices

Ultra-thin Gate Insulator of Atomic-Layer-deposited AlOxand HfOxfor Amorphous InGaZnO Thin-Film Transistors.

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices

(Invited) ALD High-k As a Common Gate Stack Solution for Nanoelectronics

The interface between silicon and a high-k oxide

Inversion-type Enhancement-Mode InP MOSFETs with ALD Al2O3, HfO2 and HfAlO Nanolaminates As High-K Gate Dielectrics

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs