GSM/EDGE Power Amplifier Module with Improved Low-Power Efficiency

Jinbo Li,Tingting Mo,Feng Xu
DOI: https://doi.org/10.1109/isicir.2011.6131922
2011-01-01
Abstract:A dual mode 900MHz GSM/EDGE Power Amplifier module (PAM) is designed using IBM 0.35μm SiGe BiCMOS technology. Bypass of the third stage is adopted for EDGE mode, leaving the final stage to work in Class E for high efficiency of GSM mode. Additionally, automatic level control (ALC) is employed to improve the power added efficiency (PAE) of low-power EDGE, along with the harmonic termination technique used in the inter-stage matching network for linearity requirement of EDGE. Simulation shows that the proposed PAM exhibits 29.5% PAE and -36.3dBc ACPR at 27dBm output for EDGE mode and 49% PAE at 35dBm output for GSM mode. After ALC, the average PAE of EDGE is boosted from 2.0% to 3.4%, which is 70% improved.
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