Abstract:The photothermal effect intensifies the pyro‐photoelectric effect as well as the optimized carrier transport rate is applied to promote charge separation, transfer and suppress charge recombination to boost charge utilization in the self‐powered photodetector. Thereafter, the UV communication system based on the self‐powered photodetector presents real‐time high‐throughput information transmission under 9600 baud rate. Ultraviolet (UV) communication is a cutting‐edge technology in communication battlefields, and self‐powered photodetectors as their optical receivers hold great potential. However, suboptimal charge utilization has largely limited the further performance enhancement of self‐powered photodetectors for high‐throughput communication application. Herein, a self‐powered Ti3C2Tx‐hybrid poly(3,4 ethylenedioxythiophene):poly‐styrene sulfonate (PEDOT:PSS)/ZnO (TPZ) photodetector is designed, which aims to boost charge utilization for desirable applications. The device takes advantage of photothermal effect to intensify pyro‐photoelectric effect as well as the increased conductivity of the PEDOT:PSS, which significantly facilitated charge separation, accelerated charge transport, and suppressed interface charge recombination. Consequently, the self‐powered TPZ photodetector exhibits superior comprehensive performance with high responsivity of 12.3 mA W−1 and fast response time of 62.2 μs, together with outstanding reversible and stable cyclic operation. Furthermore, the TPZ photodetector has been successfully applied in an integrated UV communication system as the self‐powered optical receiver capable of real‐time high‐throughput information transmission with ASCII code under 9600 baud rate. This work provides the design insight of highly performing self‐powered photodetectors to achieve high‐efficiency optical communication in the future.

Discussion of resonant enhancements of the output IP3 in high power phototodetectors

High sensitivity third-order autocorrelation measurement by intensity modulation and third harmonic detection.

Enhanced Near-Infrared Photodetection with Avalanche Gain in Silicon Microdisk Resonators Integrated with P-N Diodes

A Large Signal Equivalent Circuit Modeling and Enhanced RF Output Power of PIN Photodiodes

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

High-power traveling-wave photodetector based on an aperiodically loaded open-circuit electrode.

High-Power High-Linearity InGaAs/InP Photodiodes

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

High-Power Integrated Balanced Photodetector

Optical Power Monitoring with Ultrahigh Sensitivity in Silicon Waveguides and Ring Resonators

Realization of ultrabroadband THz/IR photoresponse in a bias-tunable ratchet photodetector

Responsibility Optimization of a High-Speed InP/InGaAs Photodetector with a Back Reflector Structure.

Boosting Charge Utilization in Self‐Powered Photodetector for Real‐Time High‐Throughput Ultraviolet Communication

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Applications of High-Saturation-current Photodiode in the RoF Links with Low Noise Figure and High Gain

Measurement of the Third Order Intercept Point for a Photodiode Using Two Maximum-Biased MZM

Characterization and optimization of high-power InGaAs/InP photodiodes

Optimizing the linearity in high-speed photodiodes

Low-Bandgap Terpolymers for High-Gain Photodiodes with High Detectivity and Responsivity from 300 nm to 1600 nm

Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes

Responsivity evaluation of photonics integrated photodetectors via pairwise measurements with an attenuation circuit