Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes

Huapu Pan,Beling, A.,Hao Chen,Campbell, Joe C.

DOI: https://doi.org/10.1109/ICIPRM.2009.5012463

2009-01-01

Abstract:The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.

What problem does this paper attempt to address?

Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1049/el:20089792

2008-01-01

Electronics Letters

Abstract:Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised using a two-tone measurement technique. The third-order local intercept point (IP3) of the device increases only slightly with frequency, and remains as high as 39 dBm up to 20 GHz. The frequency characteristics of the IP3 can be well explained by an equivalent circuit model.
Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Huapu Pan,Zhi Li,Andreas Beling,Joe C Campbell

DOI: https://doi.org/10.1364/OE.17.020221

IF: 3.8

2009-01-01

Optics Express

Abstract:The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (<3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. (C) 2009 Optical Society of America
High-Power High-Linearity InGaAs/InP Photodiodes

Andreas Beling,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1149/1.3104708

2009-01-01

ECS Transactions

Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.
High-Linearity Uni-Traveling-Carrier Photodiodes

Huapu Pan,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/lpt.2009.2034126

IF: 2.6

2009-01-01

IEEE Photonics Technology Letters

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and three-tone measurement techniques. Up to 720-MHz modulation frequency the third-order output intercept point (OIP3) reaches 56 ±1 dBm.
Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

S. J. Maddox,W. Sun,Z. Lu,H. P. Nair,J. C. Campbell,S. R. Bank

DOI: https://doi.org/10.1063/1.4757424

IF: 4

2012-01-01

Applied Physics Letters

Abstract:We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ∼80, at a record low reverse bias of 12 V.
High-Linearity Modified Uni-Traveling Carrier Photodiodes

Huapu Pan,Yang Fu,Zhi Li,Joe C. Campbell

DOI: https://doi.org/10.1364/ofc.2010.own1

2010-01-01

Abstract:We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm at 20 GHz. (C) 2010 Optical Society of America
High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Andréas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/mwsym.2008.4633212

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Photodiodes with monolithically integrated wilkinson power combiner

Yang Fu,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1109/JQE.2009.2035058

2010-01-01

Abstract:We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the frequency range up to 20 GHz.
Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

Afshan Khaliq,Xinyi Zhou,Hong-Yu Chai,Munir Ali,Hao Wu,Oussama Gassab,Hong Liu,Duo Xiao,Xiao-Guang Yang,Sichao Du

DOI: https://doi.org/10.1109/access.2024.3383836

IF: 3.9

2024-04-16

IEEE Access

Abstract:This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of thickness offers an extended linear mode operation by reducing the punch-through voltage, and indefinitely increasing the avalanche threshold voltage. A large background dark current is observed following steady, and linear multiplication in approximately direct relationship with the ramp gating. For 1310 nm short-wave infrared, normal incidence pulsed illumination at instant-to-peak voltage ratios of , a sort of negative differential resistance is incorporated into the device in a qualitative sense, owing to the illumination induced switching/variations in the intrinsic values of electron, and hole avalanche coefficients in the multiplication region. Under fixed illumination, an interesting deduction from the transient photo response is the slow quenching phenomenon prolonging for all the electrical field establishments in the device. The related measurement scheme paves the way for futuristic ramp-driven InGaAs/InP APDs for detecting SWIR wavelengths under required low power consumption environments.

computer science, information systems,telecommunications,engineering, electrical & electronic
High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Yiding Lin,Kwang Hong Lee,Shuyu Bao,Xin Guo,Hong Wang,Jurgen Michel,Chuan Seng Tan

DOI: https://doi.org/10.1364/prj.5.000702

IF: 7.6

2017-01-01

Photonics Research

Abstract:In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of similar to 47 mA/cm(2) at -1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of similar to 97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 alpha m exhibit a 3 dB bandwidth of similar to 1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to similar to 32 GHz with mesa diameter of 10 ae m. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. (C) 2017 Chinese Laser Press
A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell,P. D. Yoder

DOI: https://doi.org/10.1109/jlt.2009.2024168

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.
Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

Huapu Pan,Zhi Li,Andreas Beling,Joe C. Campbell

DOI: https://doi.org/10.1109/jlt.2010.2041038

IF: 4.7

2010-01-01

Journal of Lightwave Technology

Abstract:The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling carrier photodiode with a highly doped p-type absorber is characterized using three-tone and bias modulation measurement techniques. The bias modulation measurement is used to determine the voltage-dependent relative responsivity, R(V), for a range of photocurrent levels. The results confirm that the photocurrent dependence of the third-order output intercept point (OIP3) as determined by the three-tone method is directly related to the dependence of R(V) on photocurrent. The measured OIP3 show a weak dependence on frequency and a high value of 47.5 dBm at 20 GHz is achieved.
Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Wenyang Wang,Jinshan Yao,Jingyi Wang,Zhuo Deng,Zhiyang Xie,Jian Huang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/ol.435025

2021-01-01

Abstract:InP-based avalanche photodiodes (APDs) are widely used in short-wave infrared (SWIR) communications. In this work, a thin (200 nm nominal) InAlAs digital alloy layer consisting of two monolayer (ML) InAs and two ML AlAs was grown on InP substrate and investigated in detail. APDs with p-i-n and n-i-p structures were fabricated and characterized. The current-voltage, capacitance-voltage characteristics, and excess noise were measured at room temperature with different laser wavelengths, and the measured effective k value (ratio of impact ionization coefficients) is about 0.15 with the multiplication gain up to 12. The randomly-generated path length (RPL) model was carried out to analyze the dead space effect. Our thin digital alloy successfully reduced excess noise compared with conventional In0.52Al0.48As random alloy without introducing new elements and shows the potential for high-speed, low noise APD applications.
Characterization and optimization of high-power InGaAs/InP photodiodes

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1007/s11082-008-9230-9

IF: 3

2008-01-01

Optical and Quantum Electronics

Abstract:The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device simulator based on a drift-diffusion model. Excellent agreement has been achieved between simulations and experiments. The origin of the degradation of responsivity at high optical injection level is investigated. Parameters of the photodiode are further optimized to maximize the saturation current without sacrificing bandwidth and responsivity.
The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

huapu pan,andreas beling,hao chen,j c campbell,p d yoder

DOI: https://doi.org/10.1109/MWP.2008.4666640

2008-01-01

Abstract:Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. At 310 MHz modulation frequency the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Voltage dependent nonlinear responsivity is found to be the limiting factor for the IP3 at low frequency, while the voltage and photocurrent dependent nonlinear capacitance is responsible for the decreasing IP3 with increasing frequency. The physical origins of the nonlinear responsivity and capacitance are investigated.
Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2008.926016

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.
Discussion of resonant enhancements of the output IP3 in high power phototodetectors

d scott,na chen,e chua,huapu pan,yuanfei fu,j c campbell,dan chen,j bloch,paul k l yu

DOI: https://doi.org/10.1109/AVFOP.2011.6082143

2011-01-01

Abstract:Careful measurements of the OIP3 in high power photodetectors show a resonance peak at a particular bias voltage and photocurrent combination. In fact, for a given photocurrent, there exists an optimum bias voltage that maximizes the OIP3. One can envision a DC control circuit that would be able to maintain the optimum OIP3 performance from the photodiode. By optimizing the bias voltage for a given photocurrent, a peak OIP3 of +65dBm was measured which is believed to be the highest reported value to date.
High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Yang Fu,Huapu Pan,Chong Hu,Joe Campbell

DOI: https://doi.org/10.1109/photonics.2010.5698735

2010-01-01

Abstract:Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Hezhuang Liu,Jingyi Wang,Daqian Guo,Kai Shen,Baile Chen,Jiang Wu

DOI: https://doi.org/10.3390/nano13212895

IF: 5.3

2023-11-01

Nanomaterials

Abstract:InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers. The simulated results suggested that, by reducing the absorber doping concentration from 1 × 1016 to 1 × 1015 cm−3, the maximum quantum efficiency of the devices can rise by 1.2%, to 58%. The simulation also showed that, by increasing the doping concentration of the absorber layer within a certain range, the dark current of the device can be slightly reduced. A PIN structure was grown and fabricated, and CV measurements suggested a low doping concentration of about 1.2 × 1015 cm−3. Although the thermal activation energy of the dark current suggested a distinct component of shunt dark current at a high temperature range, a dark current of ~6 × 10−4 A/cm2 (−0.5 V) was measured at room temperature. The peak quantum efficiency of the InGaAs device was characterized as 54.7% without antireflection coating and 80.2% with antireflection coating.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Deep levels analysis in wavelength extended InGaAsBi photodetector

Jian Huang,Baile Chen,Zhuo Deng,Yi Gu,Yingjie Ma,Jian Zhang,Xiren Chen,Jun Shao

DOI: https://doi.org/10.1088/1361-6641/ab3539

2019-06-18

Abstract:InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

Applied Physics

Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes

Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

High-Power High-Linearity InGaAs/InP Photodiodes

High-Linearity Uni-Traveling-Carrier Photodiodes

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

High-Linearity Modified Uni-Traveling Carrier Photodiodes

High-power Modified Uni-Traveling Carrier Photodiode with &amp;#x226b; 50 Dbm Third Order Intercept Point

Photodiodes with monolithically integrated wilkinson power combiner

Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance

Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Characterization and optimization of high-power InGaAs/InP photodiodes

The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Discussion of resonant enhancements of the output IP3 in high power phototodetectors

High-Linearity Monolithically Integrated Photodiodes and Wilkinson Power Combiner at 20 Ghz

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Deep levels analysis in wavelength extended InGaAsBi photodetector

High-power Modified Uni-Traveling Carrier Photodiode with ≫ 50 Dbm Third Order Intercept Point