Measurement of the Third Order Intercept Point for a Photodiode Using Two Maximum-Biased MZM

Shangyuan Li,Xiaoping Zheng,Hanyi Zhang,Bingkun Zhou

DOI: https://doi.org/10.1364/cleo_at.2013.jtu4a.90

2013-01-01

Abstract:We proposed a simple method to measure the third-order intercept point for a photodiode using two-tone and two maximum-biased MZM. The measured IP3 of 16.04dBm agreed with that measured using traditional three-tone setup.

What problem does this paper attempt to address?

A General Analytical Method for Suppressing the Third-Order Intermodulation in Microwave Photonic Link Based on Dual-Parallel Mach–Zehnder Modulator

Hang Yang,Shilie Zheng,Siyuan Xu,Jun Ji,Fuhai Li,Xianmin Zhang

DOI: https://doi.org/10.1016/j.optcom.2019.124818

IF: 2.4

2020-01-01

Optics Communications

Abstract:A general analytical method by adjusting the phases of the signals applied to the four electrodes of a dual-parallel Mach–Zehnder modulator (DPMZM) is proposed to suppress the third-order intermodulation (IMD3) in microwave photonic link. Through the detailed theoretical and numerical analysis, all the signal combinations for the four electrodes of the DPMZM are found and classified into three groups according to the IMD3 cancellation mechanism. In this process, a new group of the four electrodes’ setting to suppress the IMD3 is found. The simulation and experiment are carried out to verify our discovery. It is found that this newly found group can also suppress IMD3 by about 30 dB and improve the spurious free dynamic range (SFDR) by 11.5 dB⋅Hz2∕3.
High-power Modified Uni-Traveling Carrier Photodiode with &#x226b; 50 Dbm Third Order Intercept Point

Andréas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/mwsym.2008.4633212

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier photodiode are characterized using a two-tone setup. At 0.3 GHz modulation frequency the third order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode’s 3 dB bandwidth of 23 GHz. A simple equivalent circuit model with a voltage-dependent junction capacitance is used to analyze the frequency characteristics of the intermodulation distortions.
Programming a network analyzer for third-order intercept point measurement

Zhaolong Li,Xuping Zhang,Ke Wu,Xiaoping Chen

2011-01-01

Microwave journal

Abstract:A third-order intercept point (1P3) measurement technique using a Anritsu network analyzer 37397C is proposed. The method uses a network analyzer to control two external sources and a tuned receiver of the network analyzer to measure IMD products, offering a scheme for 1P3 measurement over a band of frequency. Two external sources are controlled by the network analyzer through a general-purpose-interface-bus (GPIB). The insertion loss of the power combining network is calibrated out during the 0 dBm absolute power calibration. The individual power levels of the output signals and IMD products are extracted to perform the amplitude imbalance calibration. The extracted 1P3 number is found to be approximately 15 dBm, which agrees with the results of the sweep frequency measurement and verifies the robustness of the proposed method.
Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

A. Beling,H. Pan,H. Chen,J. C. Campbell

DOI: https://doi.org/10.1049/el:20089792

2008-01-01

Electronics Letters

Abstract:Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised using a two-tone measurement technique. The third-order local intercept point (IP3) of the device increases only slightly with frequency, and remains as high as 39 dBm up to 20 GHz. The frequency characteristics of the IP3 can be well explained by an equivalent circuit model.
High sensitivity third-order autocorrelation measurement by intensity modulation and third harmonic detection.

Yizhen Wei,Scott Howard,Adam Straub,Zinan Wang,Ji Cheng,Shiming Gao,Chris Xu

DOI: https://doi.org/10.1364/OL.36.002372

IF: 3.6

2011-01-01

Optics Letters

Abstract:We demonstrate a novel (to our knowledge) method for high sensitivity measurement of pulsed light at the telecommunication wavelength of 1558nm using a GaAsP photomultiplier tube. By modulating the input power and analyzing the harmonic components, high sensitivity third-order autocorrelation is obtained in the wavelength and power regimes where a mixture of two-photon absorption and three-photon absorption in the photomultiplier tube is present. (C) 2011 Optical Society of America
Self-referenced Electro-Optic Response Measurement of Dual-Parallel Mach-Zehnder Modulators Employing Single-Tone Level Control and Low-Frequency Bias Swing

Ying Xu,Mengke Wang,Yutong He,Chaoyu Gu,Zhiyao Zhang,Yali Zhang,Shangjian Zhang,Yong Liu

DOI: https://doi.org/10.1364/oe.454101

IF: 3.8

2022-01-01

Optics Express

Abstract:A self-referenced method is proposed to characterize the electro-optic frequency response of dual-parallel Mach-Zehnder modulators (DPMZMs) based on single-tone level control and low-frequency bias swing. The single-tone driving signal and the low-frequency bias signal of the DPMZM mix with each other after photodetection, and a low-frequency beat note is generated in the electrical domain. The functional relationship between the desired low-frequency amplitude and the single-tone driving level is investigated and established, from which the modulation depth and half-wave voltage are extracted with the help of regression analysis. We experimentally demonstrate the feasibility of the proposed method and compare it with the conventional ones to check the consistency. The self-referenced method features single-tone modulation and low-frequency detection for measuring high-speed DPMZMs, which avoids the use of a broadband photodetector (PD) and the influence of the uneven response of the PD.
Bias-Independent and Self-Calibrated Electrical Method for Microwave Characterization of Dual-Parallel Mach–Zehnder Modulators Based on Two-Tone and Bias-Swing Modulation

Heng Wang,Shangjian Zhang,Xinhai Zou,Yali Zhang,Shuang Liu,Yong Liu

DOI: https://doi.org/10.1109/tmtt.2016.2647248

IF: 4.3

2017-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:A bias-independent and self-calibrated measurement is proposed for the high-frequency response of dual-parallel Mach-Zehnder modulators (DPMZMs) based on two-tone and bias-swing modulation. The two-tone and bias-swing sidebands beat with each other and generate the desired low-frequency beat notes, which allows to extracting the modulation depths and half-wave voltages of DPMZMs from the sub-MHz electrical spectrum analysis. Our measurement is bias-independent due to the insensitivity to the bias voltages of the DPMZM, and it avoids any correction for the roll-off responsivity of photodetection through the specific two-tone and bias-swing modulation. Our method is experimentally demonstrated and is compared with the traditional ones for the accuracy. The proposed electrical method features bias-independence and self-calibration, providing a low-frequency photodetection and spectrum analysis for measuring high-speed DPMZMs.
Bias-Independent Inter-Modulation Method for Simultaneously Measuring Low-Frequency Modulation and Bias Half-Wave Voltages of Mach-Zehnder Modulators

Junfeng Zhu,Xinhai Zou,Ying Xu,Yutong He,Yali Zhang,Zhiyao Zhang,Shangjian Zhang,Yong Liu

DOI: https://doi.org/10.1007/s13320-023-0678-9

IF: 2.814

2023-01-01

Photonic Sensors

Abstract:A bias-independent inter-modulation method is proposed and demonstrated for measuring low-frequency modulation and bias half-wave voltages of Mach-Zehnder modulators (MZMs). The method consists of simultaneous sinusoidal modulation on the modulation and bias ports of the MZM under test. Sinusoidal-modulated sidebands heterodyne with each other and generate the desired inter-modulation products after photodetection, which allows extracting both the modulation depth and half-wave voltage for the modulation and bias ports of the MZM. Our method is independent of bias voltages of the MZM, which can be canceled out by carefully choosing the sinusoidal-modulation frequencies. Moreover, the proposed method enables the low swing voltage for measuring both the modulation depth and half-wave voltage of MZMs. Experiments indicate that the proposed method features the simple setup and high accuracy for low-frequency response measurement ranging from 1 Hz to 1 MHz.
An Improved Photonic Analog-to-digital Conversion Scheme Using Mach–Zehnder Modulators with Identical Half-Wave Voltages

Hongxia He,Hao Chi,Xianbin Yu,Tao Jin,Shilie Zheng,Xiaofeng Jin,Xianmin Zhang

DOI: https://doi.org/10.1016/j.optcom.2018.04.081

IF: 2.4

2018-01-01

Optics Communications

Abstract:An improved photonic analog-to-digital conversion (ADC) scheme using Mach–Zehnder modulators (MZMs) is proposed and demonstrated. In the approach, all the MZMs have the same electrode length, which eliminates the need of MZMs with very low half-wave voltages as in the scheme using MZM array with geometrically-scaled half-wave voltages. An electric circuit is employed to realize linear combinations of the detected signals (including subtraction and addition). By properly biasing the MZMs and setting the thresholding voltages in the comparators, a digital Gray-code output is obtained. The proposed ADC scheme can effectively improve the bit resolution compared with the previous photonic ADCs based on the phase-shifting technique. Theoretical analysis and proof-of-concept experiments are presented to verify the feasibility of the proposed approach.
Self-referenced Electrical Method for Measuring Frequency Response of High-Speed Mach-Zehnder Modulators Based on Two-Tone Modulation

Heng Wang,Shangjian Zhang,Xinhai Zou,Yali Zhang,Yong Liu

DOI: https://doi.org/10.1117/12.2247663

2016-01-01

Abstract:We demonstrated a self-referenced electrical method for measuring frequency response of high-speed Mach-Zehnder modulators (MZMs) based on two-tone modulation. The modulation index and half-wave voltage can be extracted from the heterodyne ratio of two desired components by properly adjusting bias voltage. The method achieves the electrical domain measurement of the frequency-dependent modulation indices and frequency-dependent half-wave voltages of MZMs without any extra calibration for the responsivity fluctuation in the photodetection. Moreover, it reduces half bandwidth requirements of photodetector and electrical spectrum analyzer by carefully choosing a half frequency relationship of two-tone microwave signals. The consistency between our method and the optical spectrum analysis method verifies the simple but accurate measurement.
High-Power High-Linearity InGaAs/InP Photodiodes

Andreas Beling,Huapu Pan,Joe C. Campbell

DOI: https://doi.org/10.1149/1.3104708

2009-01-01

ECS Transactions

Abstract:The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.
Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Huapu Pan,Zhi Li,Andreas Beling,Joe C Campbell

DOI: https://doi.org/10.1364/OE.17.020221

IF: 3.8

2009-01-01

Optics Express

Abstract:The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (<3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model. (C) 2009 Optical Society of America
Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Andreas Beling,Huapu Pan,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/LPT.2008.926016

2008-01-01

Abstract:The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a two-tone setup. At 310-MHz modulation frequency, the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Based on experimental results for the dependence of responsivity and PD capacitance on bias voltage and photocurrent, we use a simple equivalent circuit model to simulate the frequency characteristics of the intermodulation distortions.
Extraction and Measurement Sensitivity Improvement of Third‐order Autocorrelation Trace from Mixed Autocorrelations

Yizhen Wei,Shiming Gao

DOI: https://doi.org/10.1002/mop.28557

IF: 1.311

2014-01-01

Microwave and Optical Technology Letters

Abstract:ABSTRACTA valuable insight is presented on obtaining high‐sensitivity third‐order autocorrelation trace in the wavelength and power regimes where both two‐ and three‐photon absorption of the detector should be considered. Theoretical analysis and experimental results are provided to discuss the limitations to the measurement sensitivity. By developing a new algorithm of harmonics detection, an approach is also proposed to improve the measurement sensitivity beyond our previous demonstration. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2234–2237, 2014
Measuring the Frequency Response of Photodiode Using Phase-Modulated Interferometric Detection

Quanyi Ye,Chun Yang,Yuhua Chong

DOI: https://doi.org/10.1109/lpt.2013.2280767

IF: 2.6

2014-01-01

IEEE Photonics Technology Letters

Abstract:A novel method is proposed for measuring the frequency response of photodiodes. This method calculates the frequency response of the photodiode based on the gain peaks of the phase-modulated interferometric detection using a microwave network analyzer, and the half-wave voltage of the phase modulator, which is calibrated by measuring the intensity ratio of the modulated optical side-bands with the optical spectrum analyzer. The experimental results show a good match between the frequency response of photodiode measured by phase-modulated interferometric detection and by Mach-Zehnder intensity-modulated direct demodulation, as well as the data provided by the photodiode manufacturer. It provides an easy way to quickly sweep the frequency response of the photodiode, and the bias-control is not needed when calibrating half-voltage of the phase modulator.
Discussion of resonant enhancements of the output IP3 in high power phototodetectors

d scott,na chen,e chua,huapu pan,yuanfei fu,j c campbell,dan chen,j bloch,paul k l yu

DOI: https://doi.org/10.1109/AVFOP.2011.6082143

2011-01-01

Abstract:Careful measurements of the OIP3 in high power photodetectors show a resonance peak at a particular bias voltage and photocurrent combination. In fact, for a given photocurrent, there exists an optimum bias voltage that maximizes the OIP3. One can envision a DC control circuit that would be able to maintain the optimum OIP3 performance from the photodiode. By optimizing the bias voltage for a given photocurrent, a peak OIP3 of +65dBm was measured which is believed to be the highest reported value to date.
The Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Produced by Bias Modulation

Huapu Pan,Andreas Beling,Hao Chen,Joe C. Campbell

DOI: https://doi.org/10.1109/ipgc.2008.4781411

2008-01-01

Abstract:The effect of bias modulation on the nonlinear response of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) with a high third-order intercept point (IP3) larger than 50 dBm is characterized using a bias modulation measurement setup. An analytical equivalent circuit model is developed to explain the frequency characteristics of the intermodulation distortions produced by the bias modulation and give insight into the limiting factor of the IP3 of MUTC-PD operating at high reverse bias. The bias modulation measurement also shows the potential of the same MUTC-PD to be used as a high-power photonic mixer operating at low bias. A high up-converted signal power of -10 dBm and a low conversion loss of -3 dB has been achieved at 12.1 GHz with the MUTC-PD.
Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes

Huapu Pan,Beling, A.,Hao Chen,Campbell, Joe C.

DOI: https://doi.org/10.1109/ICIPRM.2009.5012463

2009-01-01

Abstract:The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
Scalable High-frequency Measurement of Photodetectors through Harmonic Up-conversion Based on Pilot-aided Electro-optical Stimulus

Ying Xu,Xinhai Zou,Junfeng Zhu,Chao Jing,Heping Li,Yali Zhang,Zhiyao Zhang,Wenting Wang,Shangjian Zhang,Yong Liu,Ninghua Zhu

DOI: https://doi.org/10.1109/jlt.2024.3382975

IF: 4.7

2024-01-01

Journal of Lightwave Technology

Abstract:A scalable electrical method is proposed for measuring high-frequency responses of photodetectors (PDs) through harmonic up-conversion based on pilot-aided electro-optical stimulus. The proposed method provides wideband optical stimulus by the electro-optical harmonic up-conversion and subtracts the frequency response of the assisted electro-optical Mach-Zehnder modulator (MZM) based on the pilot insertion and extraction fixed at low frequency, which is free of any golden intensity modulator (IM) of known performance. Moreover, it achieves wideband and scalable high-frequency measurement of PDs with n-fold measuring frequency range, where the sweeping frequency up to fs of the assisted MZM enables the measuring frequency range of n×fs. In the experimental demonstration, a commercial PD is measured with an assisted MZM under a frequency-swept modulation up to 16.75 GHz and a fixed-low-frequency pilot signal at 80 MHz, and the frequency responses are evaluated up to 67 GHz. Moreover, the feasibility of the scalable scheme is proved by those cases of 1, 2, 3, and 4-fold measuring frequency range. The consistency between our method and the two-tone mixing method verifies that the scalable high-frequency measurement provides a simple but accurate method for the performance characterization of high-speed PDs.

engineering, electrical & electronic,optics,telecommunications
Ratiometric Wavelength Monitor Based on Mach-Zehnder Interferometer over a 80 nm Wavelength Range

Hui Zhao,Guangyi Song,Shuxin Wang,Tingting Lang,Jianjun He

DOI: https://doi.org/10.1117/12.2505121

2018-01-01

Abstract:In this paper, a ratiometric wavelength monitor at around 1550 nm based on the passive Silicon-on-Insulator (SOI) integrated device is proposed, theoretically investigated and fabricated. This monitor is made of a single Mach-Zehnder Interferometer (MZI) with direction coupler acting as edge filter. The ouput spectral response is designed to be 'X-type'. The device shows a resolution of better than 0.4 nm over the wavelength range from 1505 nm to 1585 nm with a discrimination range of 30.5 dB from 15.5 dB to -15dB, which is suitable for wavelength measurement. Based on the single mode principle, the waveguide has a 220 nmx500 nm cross section for TM-polarized mode, and the total chip size is only 18 umx20 um. In conclusion, this proposed ratiometric wavelength monitor based on a single Mach-Zehnder Interferometer on SOI platform can realize the excellent resolution over large wavelength range.

Measurement of the Third Order Intercept Point for a Photodiode Using Two Maximum-Biased MZM

A General Analytical Method for Suppressing the Third-Order Intermodulation in Microwave Photonic Link Based on Dual-Parallel Mach–Zehnder Modulator

High-power Modified Uni-Traveling Carrier Photodiode with &amp;#x226b; 50 Dbm Third Order Intercept Point

Programming a network analyzer for third-order intercept point measurement

Measurement and Modelling of High-Linearity Partially Depleted Absorber Photodiode

High sensitivity third-order autocorrelation measurement by intensity modulation and third harmonic detection.

Self-referenced Electro-Optic Response Measurement of Dual-Parallel Mach-Zehnder Modulators Employing Single-Tone Level Control and Low-Frequency Bias Swing

Bias-Independent and Self-Calibrated Electrical Method for Microwave Characterization of Dual-Parallel Mach–Zehnder Modulators Based on Two-Tone and Bias-Swing Modulation

Bias-Independent Inter-Modulation Method for Simultaneously Measuring Low-Frequency Modulation and Bias Half-Wave Voltages of Mach-Zehnder Modulators

An Improved Photonic Analog-to-digital Conversion Scheme Using Mach–Zehnder Modulators with Identical Half-Wave Voltages

Self-referenced Electrical Method for Measuring Frequency Response of High-Speed Mach-Zehnder Modulators Based on Two-Tone Modulation

High-Power High-Linearity InGaAs/InP Photodiodes

Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber.

Measurement And Modeling Of A High-Linearity Modified Uni-Traveling Carrier Photodiode

Extraction and Measurement Sensitivity Improvement of Third‐order Autocorrelation Trace from Mixed Autocorrelations

Measuring the Frequency Response of Photodiode Using Phase-Modulated Interferometric Detection

Discussion of resonant enhancements of the output IP3 in high power phototodetectors

The Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Produced by Bias Modulation

Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes

Scalable High-frequency Measurement of Photodetectors through Harmonic Up-conversion Based on Pilot-aided Electro-optical Stimulus

Ratiometric Wavelength Monitor Based on Mach-Zehnder Interferometer over a 80 nm Wavelength Range

High-power Modified Uni-Traveling Carrier Photodiode with ≫ 50 Dbm Third Order Intercept Point