Abstract:Exploring the potential of Al‐rich AlGaN channel high electron mobility transistors on silicon substrates for high temperature applications through analysis of electron transport properties and thermal reliability. Tunable structure compositions and device fabrication on large and low‐cost substrates make these structures promising candidates for next‐generation power devices. Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.

Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

High Frequency Noise Model of AlGaN/GaN HEMTs

A Temperature Analysis of High-power AlGaN/GaN HEMTs

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

1/F Noise in GaN/AlGaN HEMTs

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer