Recent advances and applications of power electronics and motor drives - Power semiconductor devices

Huang, A.

DOI: https://doi.org/10.1109/IECON.2008.4757922

2008-01-01

Abstract:High voltage silicon carbide (SiC) power devices, as post-silicon devices, have shown their advantages in high voltage applications. SiC insulated-gate bipolar transistor (IGBT) and thyristors technology becomes attractive for high voltage (15 kV to 25 kV) due to their superior on-state characteristics, fast switching speed, low loss and wide reverse biased safe operating area (RBSOA). The emerging post-silicon power semiconductor technologies, especially new SiC power semiconductors, have great impacts on high power utility. Several application concepts that are original considered impractical become feasible. They will also drive a dramatic change on existing power-electronics based utility applications, especially for flexible AC transmission system (FACTS) devices. Moreover, they have great impacts on motor drive applications.