Abstract:Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A $({\bf 0.225}{\bf cm}\times {\bf 0.45cm})$ and 30A $({\bf 0.45}{\bf cm}\times {\bf 0.45cm})$ devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than ${\bf 50}\ {\bf m}{\bf\Omega}$ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating longterm stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of ${\bf 10}\ {\bf m}{\bf\Omega}$, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.

Extreme High Efficiency Enabled by Silicon Carbide (sic) Power Devices

Technical approaches towards ultra-high power density SiC inverter in electric vehicle applications

Soft-switching SiC Power Electronic Conversion for Distributed Energy Resources and Storage Applications

Recent progress of SiC power devices and applications

Sic Mosfet Zero-Voltage-Switching Svm Controlled Three-Phase Grid Inverter

An SiC MOSFET & Si Diode Hybrid Three-Phase High-Power Three-level Rectifier

SiC Power Devices for Microgrids

Recent advances in silicon carbide MOSFET power devices

A High Efficiency Two-Stage ZVS AC/DC Converter with All SiC MOSFET

Development and Prospect of SiC Power Devices in Power Grid

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Advances in SiC power MOSFET technology

High efficiency power factor correction power supply based on SiC device

SiC based Technology for High Power Electronics and Packaging Applications

SiC power devices for industrial applications

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices

An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter