Abstract:The optimization of microelectronic devices and Microelectromechanical Systems (MEMS) technology depends on the knowledge of the mechanical and thermophysical properties of the thin film materials used to fabricate them. The thickness, stoichiometry, structure and thermal history can affect the properties of thin films causing their mechanical and thermophysical properties to diverge from bulk values. Moreover, it is known that the mechanical and thermophysical properties of thin films vary considerably at different temperatures. Bulk properties of semiconductors have been characterized over a wide range of temperatures; however there is limited information on thin film properties of silicon-based compounds such as silicon nitride, specially at high temperatures. In our work, MEMS devices designed to record the localized maximum temperature during high temperature thermal processes, which we call Breaking T-MEMS, will be presented as a way to determine some of the mechanical properties (Young's modulus and fracture strength) and thermophysical properties (coefficient of thermal expansion) of silicon-rich nitride thin films at high temperatures. The Breaking T-MEMS device consists of a thin film bridge suspended over a substrate. During testing, the devices are thermally loaded in tension by heating the sample. The low coefficient of thermal expansion of the film relative to that of the substrate causes the thin film bridge to break at a specific temperature. Through a combination of indirect experimental measurements, analytical expressions, numerical and statistical analysis, and if the experiments are conducted using at least two different substrates of known temperaturedependent coefficients of thermal expansion, some of the material properties of the film can be calculated from the breaking temperatures of various devices. The two candidate materials for the substrate are silicon and aluminum oxide (sapphire).

Tuning the Mechanical Properties of SiO2 Thin Film for MEMS Application

Modification of the Mechanical Properties of Sio2 Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications

Tuning the Mechanical Properties of Poly-Silicon Film by Surface Modification Using Plasma Treatment

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Tuning the shape and curvature of micromachined cantilevers using multiple plasma treatments

Characterization of the Young's Modulus and Residual Stresses for a Sputtered Silicon Oxynitride Film Using Micro-Structures

Variation of MEMS Thin Film Device Parameters under the Influence of Thermal Stresses

Control the shape and curvature of micromachined cantilever using multiple plasma chemistry bonding technology

Fabricating Processes Of Free-Standing Silicon Nitride Thin Film For Mems Devices

Mechanical characterization of biocompatible thin film materials by scanning along micro-machined cantilevers for micro-/nano-system

Effect of oxygen plasma on nanomechanical silicon nitride resonators

Study on Compatible Cmos-Mems Process with Surface Micromachining for the Application of Monolithic Integration

Micro-mechanical Characterisation for MEMS Thin Films by Bending Μ-Machined Cantilevers

Mechanical and Thermophysical Properties of Silicon Nitride Thin Films at High Temperatures Using In-Situ Mems Temperature Sensors

The Investigation of Sputtered Amorphous Silicon Films for MEMS and NEMS Applications

Structural Optimization and Mechanical Simulation of MEMS Thin-Film Getter–Heater Unit

Effect of Input Power and Gas Pressure on the Roughening and Selective Etching of Sio2/Si Surfaces in Reactive Plasmas

Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma

Synthesis and Characterization of LPCVD Polysilicon and Silicon Nitride Thin Films for MEMS Applications

Nanomechanical Characterisation of MEMS Thin Film Materials