Abstract:For strained-silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs), the formation of a low-resistance source and drain region is as important in terms of enhanced performance as optimizing the strain-induced increase in inversion-carrier mobility. The crystallographic, compositional, and electrical properties of an arsenic-ion implanted strained silicon/Si0.7Ge0.3 heterostructure were investigated in order to acquire basic information for fabricating low-resistance source and drain region of the n-channel strained-silicon MOSFET. The strained-silicon layer is completely recrystallized by rapid thermal annealing after arsenic implantation, but misfit dislocations were formed by annealing (at 1000 °C) in the case thickness of the strained-silicon layer exceeding the critical thickness. Arsenic diffusivity in strained silicon was identical to that in silicon, whereas that in SiGe was higher than that in silicon. Germanium recoil and enhanced diffusion caused by arsenic implantation to the SiGe layer was observed. This phenomenon can degrade the abruptness of the strained-silicon/SiGe interface during the formation of a shallow source and drain region. Solubility limit of arsenic in strained silicon was 2×1020 cm−3 and identical to that in silicon, on the other hand, the solubility limit in Si0.7Ge0.3 reduced by half. Electron mobility in strained silicon was by about 20%–30% higher than that in silicon, and that in Si0.7Ge0.3 was by about 20%–30% lower than those in silicon. In order to reduce parasitic resistance in the shallow source and drain region, thicker strained silicon layer is thus desirable, however, it should be very careful to control the strained-silicon thickness below the critical value.

Uniaxial Strained Silicon N-Fets On Silicon-Germanium-On-Insulator Substrates With An E-Si0.7ge0.3 Stress Transfer Layer And Source/Drain Stressors For Performance Enhancement

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

A Novel Strained Si Channel Heterojunction pMOSFET

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Design of DG MOSFET with Tri-Layered Strained Silicon Channel

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Fabrication of strained Si0.55Ge0.45 channel PMOSFETs directly on a Si substrate

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

Integration of Highly Strained Sige in Source and Drain with Hk and Mg for 22 Nm Bulk Pmos Transistors