Abstract:The novel integrated temperature sensor of a power 4H-SiC MOSFET for precise real-time temperature monitoring is proposed in this article, in which a lateral Schottky barrier diode (SBD) is embedded. A physical model considering the influence of the lateral-distribution effect and interface states of the lateral SiC SBD is presented to explain the mechanism and direct the design of the sensor. A high degree of linearity ( ${R}^{{2}}{)}$ is achieved, and the proposed sensor obtains high design and fabrication tolerance and integration flexibility, namely, a much smaller size is viable. Specifically, the ${R}^{{2}}$ of the fabricated sensor is 0.9999 in the range of 15°–200°. Under the protection of the p-well, the crosstalk value ( ${V}_{\text {cross}}{)}$ between the SiC vertical double-diffused metal-oxide-semiconductor field-effect transistor (VDMOS) and sensor is greatly suppressed, and ${V}_{\text {cross}}$ is less than ±1.87° when the VDMOS is switching. Self-heating tests are employed for comparison with the temperature-sensitive electrical parameter (TSEP) method and RC thermal resistance model method. The proposed sensor has the potential for integration into SiC modules and integrated circuits (ICs) to realize real-time temperature estimation with high precision and low noise.

A novel built-in CMOS sensor for on-line thermal monitoring of VLSI circuits

A Novel Built-in CMOS Temperature Sensor for VLSI Circuits

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

CMOS Digital Temperature Sensor with Self-Correcting Technique

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

Design of a Novel All-CMOS Built-In Temperature Sensor

Smart Temperature Sensor for Thermal Testing of Cell-Based ICs

A Novel CMOS Temperature Sensor with High Accuracy Wide Supply Voltage Range

A Compact Temperature to Frequency Converter with 3σ inaccuracy inaccuracy of +0.57/.0.65 °C for On-chip Thermal Monitoring

A Novel Low Power Wide Supply Voltage Range Cmos Temperature Sensor With-0.2/0.5 Degrees C Error From-20 Degrees C To 60 Degrees C

Integrated Lateral SBD Temperature Sensor of a 4H-Sic VDMOS for Real-Time Temperature Monitoring

A Novel Method for Online Junction Temperature Monitoring of Power Module Based on In-situ Sensor Fabrication

A novel low power wide supply voltage range CMOS temperature sensor with 0.2/0.5°C error from -20°C to 60°C

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

A New Type of CMOS Temperature Sensor