Abstract:Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the variation sources of MLC STT-RAM designs and their impacts on the reliability of the read and write operations. On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices.

Multilevel magnetoresistive random access memory written at Curie point

Magnetic Random Access Memory (MRAM)

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Strain-Mediated Multilevel Ferroelectric Random Access Memory Operating Through A Magnetic Field

Fabrication of Magnetic Random Access Memory Based on Nanoring-Type Magnetic Tunnel Junctions and Spin-Polarized Current Driving

Spin-orbit-torque-driven Multilevel Switching in Ta/CoFeB/MgO Structures Without Initialization

A Multi-Level Cell for STT-MRAM Realized by Capping Layer Adjustment

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

Micromagnetic Studies of Domain Structures and Switching Properties in a Magnetoresistive Random Access Memory Cell

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory.

Micromagnetic Studies of Read and Write Process in Magnetoresistive Random Access Memory

A Spin Hall Effect-Based Multi-Level Cell for Mram

Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design with Spin-Polarized Current Switching

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

Multi-level Cell STT-RAM: is It Realistic or Just a Dream?

A multilevel nonvolatile magnetoelectric memory based on memtranstor