Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing
Kuan-Ming Chen,Chiao-Yun Lo,Shih-Ching Chiu,Yi-Hui Su,Yao-Jen Chang,Guan-Long Chen,Hsin-Han Lee,Xin-Yo Huang,Cheng-Yi Shih,Chih-Yao Wang,I-Jung Wang,Shan-Yi Yang,Yu-Chen Hsin,Jeng-Hua Wei,Shyh-Shyuan Sheu,Wei-Chung Lo,Shih-Chieh Chang,Yuan-Chieh Tseng
DOI: https://doi.org/10.1063/5.0217921
IF: 4
2024-07-01
Applied Physics Letters
Abstract:Spin-transfer torque magnetic random access memory (MRAM) devices have considerable potential for high-performance computing applications; however, progress in this field has been hindered by difficulties in etching the magnetic tunnel junction (MTJ). One notable issue is electrical shorting caused by the accumulation of etching by-products on MTJ surfaces. Attempts to resolve these issues led to the development of step-MTJs, in which etching does not proceed beyond the MgO barrier; however, the resulting devices suffer from poor scalability and unpredictable shunting paths due to asymmetric electrode structures. This paper outlines the fabrication of pillar-shaped MTJs via a four-step etching process involving reactive-ion etching, ion-beam etching, oxygen exposure, and ion-trimming. The respective steps can be cross-tuned to optimize the shape of the pillars, prevent sidewall redeposition, and remove undesired shunting paths in order to enhance MTJ performance. In experiments, the proposed pillar-MTJs outperformed step-MTJs in key metrics, including tunneling magnetoresistance, coercivity, and switching efficiency. The proposed pillar-MTJs also enable the fabrication of MRAM cells with smaller cell sizes than spin–orbit torque devices and require no external field differing from voltage-controlled magnetic anisotropy devices.
physics, applied