Abstract:Titanium dioxide (TiO 2 ) with advantages including abundance in earth, non-toxicity, high chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be highly promising for advanced electronics. However, the thermal stability and low bandgap (E g ) of TiO2 pose a big challenge for TiO 2 to be used as dielectric, which could be resolved by doping with other metal cations. In this work, we studied the impact of gallium incorporation on electrical and material characteristics of TiO 2 thin films. These TiO 2 and Ti X GaO films with thickness of 15 nm were derived by atomic layer deposition (ALD) and then annealed in O 2 ambient at 500°C, where the levels of Ga incorporation were tuned by the cycle ratio (X) of TiO 2 to that of Ga 2 O 3 during ALD growth. Both thin film transistors (TFTs) using Ti X GaO (TiO 2 ) thin films as the channel and metal-oxide semiconductor capacitors (MOSCAPs) using Ti X GaO (TiO 2 ) thin films as the dielectric were fabricated to unravel the impact of Ga incorporation on electrical properties of TiO 2 thin films. It is found that the Ga incorporation reduces the conductivity of TiO 2 thin films significantly. Pure TiO 2 thin films could be the ideal channel material for TFTs with excellent switching behaviors whereas Ga-incorporated TiO 2 thin films could be the dielectric material for MOSCAPs with good insulating properties. The leakage current and dielectric constant ( k ) value are also found to be decreased with the increased Ga content in Ti X GaO/Si MOSCAPs. Additionally, the density of interface trap (D it ) between Ti X GaO and Si were extracted by multi-frequency conductance method, where a “U-shape” trap profile with similar level of D it values can be observed for Ti X GaO MOSCAPs with varying Ga contents. Material characterizations show that the Ga incorporation destabilizes the crystallization and enlarges the bandgap (E g ) of TiO 2 while maintaining a smooth surface. Interestingly, Ga incorporation is found to decrease the overall oxygen content and introduce more oxygen-related defects in the film. As a result, the reduction of leakage current upon Ga incorporation in MOSCAPs could be explained by amorphization of the film and enlarged band offset to Si rather than oxygen defect passivation. These Ga-incorporated TiO 2 films may found promising usage in future electronic device applications such as trench capacitors in dynamic random-access memory, where the emerging high- k dielectrics with low leakage currents and high thermal stability are demanded.

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Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors with High- ${k}$ ZrO 2 Gate Insulator

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

Fabrication of Flexible Amorphous InGaZnO Thin Film Transistors with SiOx/TaOx Gate Insulators

Improved Electrical Performance of Oxide Transistor Utilizing Gallium Doping Both in Channel and Dielectric Layers

Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

Field-Effect Transistors With Laalo3 And Laaloxny Gate Dielectrics Deposited By Laser Molecular-Beam Epitaxy

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al 2 O 3 -Passivated High-k HfGdO x Dielectrics

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Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Electrical properties and parameter analysis of all-solid-state LaZrO/InO electric double-layer transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

High-performance Organic Thin-Film Transistor by Using LaNbO As Gate Dielectric

TiSiOx Gate Dielectrics Produced by Reactive Sputtering for High Performance InGaZnO Thin Film Transistors

Effects of Annealing Temperature of NbLaO Gate Dielectric on Electrical Properties of ZnO Thin-Film Transistor

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method