Abstract:ZnO thin film transistor with high-k NbLaO/SiO2 bilayer gate dielectric was fabricated by sputtering, and the temperature dependence of the electrical properties of the device was investigated in the temperature range of 293-353K for clarifying thermally activated carrier generation and carrier transport mechanisms in the conducting channel. With the increase in the temperature, the transfer curve shifts toward the negative gate voltage direction with a negative shift of the threshold voltage, an increase in the off-state current and the subthreshold slope, and a significant increase in carrier mobility. The decrease in the threshold voltage is originated from the formation of oxygen vacancy and the release of free electrons in the ZnO channel, and the formation energy can be estimated to be approximately 0.3eV. In both subthreshold and above-threshold regimes, the temperature dependence of the drain current shows Arrhenius-type dependence, and the activation energy is around 0.94eV for a gate voltage of 2V, reducing with the increase in the gate voltage. The temperature dependence of the ZnO film resistance also exhibits an Arrhenius-type behavior, indicating that the thermal activation conduction process is the dominant conduction mechanism in the ZnO film. Two types of thermal activation conduction processes are observed in the 303-373K temperature range. This is explained in terms of the existence of two types of deep donors that are consecutively excited to the conduction band as the temperature increases.

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Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Evolution of Electrical Performance of Zno-Based Thin-Film Transistors by Low Temperature Annealing

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Comparative Study of Nb 2 O 5 , NbLaO, and La 2 O 3 As Gate Dielectric of InGaZnO Thin-Film Transistor

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Annealing effect on electrical properties of high-k MgZnO film on silicon

Dependence of Annealing on Stability of Transparent Amorphous InGaZnO Thin Film Transistor