Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.

Investigation of band-to-band tunneling parameters in sige by using MOSFET GIDL current analysis

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

Investigation Of Line Tunnel Field Effect Transistor With Ge/Si Heterojunction

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Monte Carlo Simulation of Band-to-band Tunneling in Silicon Devices

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction*

Study of gate-induced drain leakage (GIDL) effects in thin gate oxynitride NMONSFET's

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Analytical Drain Current Model of Strained Junctionless Nanowire Tunnel Field‐effect Transistor Fabricated on Virtual Substrate

Analysis of gate-induced drain leakage in gate-all-around nanowire transistors