Abstract:This article proposes a novel ultralow specific ON-resistance (${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

A Novel Triple-RESURF SON LDMOS and Its Analytical Model

A Novel RESURF LDMOS with Embedded CB-layer

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer

An Analytical Model for the 3D-RESURF Effect

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

Simulation for a Novel Vertical SOI Configuration

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

Analytical Model For The Ideal Breakdown Voltage And Optimum Doping Profile Of Soi Resurf Ldmos

3d-Resurf Soi Ldmosfet For Rf Power Amplifiers

Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor

A Novel RF LDMOS Fabricated with Standard Foundry Technology

Linearly Varying Surface-Implanted N− Layer Used for Improving Trade-off Between Breakdown Voltage and On-Resistance of RESURF LDMOS Transistor

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

Lateral Unbalanced Super Junction (Usj)/3d-Resurf for High Breakdown Voltage on Soi