Abstract:Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.

Growth of a Single Graphene Sheet on a Tungsten Tip

Field Emission Characteristics from Vertical Few-Layer Graphene Growth on Graphite Substrate

A Two-Dimensional Structure Graphene STM Tips Fabricated by Microwave Plasma Enhanced Chemical Vapor Deposition

Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Optimize the Field Emission Character of a Vertical Few-Layer Graphene Sheet by Manipulating the Morphology.

One Second Formation of Large Area Graphene on a Conical Tip Surface via Direct Transformation of Surface Carbide

Controlled synthesis of large-scale, uniform, vertically standing graphene for high-performance field emitters.

Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface.

Toward Direct Growth of Ultra‐Flat Graphene

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Flame Synthesis of Graphene Films in Open Environments

Field Emission Characteristics of Vertical Few-Layer Graphene with Different Shapes

Fabrication of atomically sharp tungsten tips

Growth direction manipulation of few-layer graphene in the vertical plane with parallel arrangement

High-Mobility Graphene on Liquid P-Block Elements by Ultra-Low-Loss Cvd Growth

Toward Direct Growth of Ultra‐Flat Graphene (adv. Funct. Mater. 42/2022)

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate.