An on-chip all silicon passive optical diode based on photonic crystal L3 cavities

yong zhang,danping li,cheng zeng,zengzhi huang,jinzhong yu,jinsong xia

DOI: https://doi.org/10.1364/cleo_si.2014.stu3m.7

2014-01-01

Abstract:An all-silicon passive optical diode based on cascaded photonic crystal L3 cavities is demonstrated. Nonreciprocal transmission ratio of 30.8 dB and insertion loss of 8.3 dB are realized in the device.

What problem does this paper attempt to address?

Silicon optical diode based on cascaded photonic crystal cavities.

Yong Zhang,Danping Li,Cheng Zeng,Zengzhi Huang,Yi Wang,Qingzhong Huang,Ying Wu,Jinzhong Yu,Jinsong Xia

DOI: https://doi.org/10.1364/OL.39.001370

IF: 3.6

2014-01-01

Optics Letters

Abstract:An all-silicon passive optical diode based on optical nonlinearity in cascaded photonic crystal (PhC) L3 cavities is proposed and demonstrated. A nonreciprocal transmission ratio (NTR) of 30.8 dB and insertion loss of 8.3 dB are realized in the device. The device has a relatively broad 17 dB operation bandwidth of 0.08 nm, and at least 16 dB of NTR is achieved when input power varies between -6.25 and -2.95 dBm. A nonlinear couple mode model for cascaded PhC cavities is established to analyze the behavior of the device, and numerical simulation results are in good agreement with the experiment results. (C) 2014 Optical Society of America
High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
An All-Silicon Passive Optical Diode.

Li Fan,Jian Wang,Leo T. Varghese,Hao Shen,Ben Niu,Yi Xuan,Andrew M. Weiner,Minghao Qi

DOI: https://doi.org/10.1126/science.1214383

IF: 56.9

2011-01-01

Science

Abstract:A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.
High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Ping Yu,Huiye Qiu,Hui Yu,Feiqing Wu,Zhuoyuan Wang,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2016.2581205

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate the design, fabrication, and characterization of side-coupled airmode nanobeam photonic crystal cavities in silicon-on-insulator platform. Results show that repeatable devices achieve similar high loaded quality factors (>10(4)) and large optical energy ratio in low refractive region. The unload Q-factors of the fabricated cavities are estimated to exceed 10(5). With side-coupled configuration, high transmission of through port is achieved with typical insertion loss less than 0.5 dB. Wavelength shifts of the measured resonances with respect to the designed values are observed and well explained by considering the fluctuation of etching depth. The demonstrated side-coupled airmode nanobeam photonic crystal cavities may find their applications in ultracompact integrated photonics, especially for on-chip photonic sensor, notch filter, or optical switch.
On-chip optical diode based on silicon photonic crystal heterojunctions

Chen Wang,Chang-Zhu Zhou,Zhi-Yuan Li

DOI: https://doi.org/10.1364/OE.19.026948

2011-10-26

Abstract:Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.

Optics
Optical diode based on cascaded nonlinear nanocavities

Chao Li,Shu-Ya Wu,Yong-Lu Hu,Dao-Liu Liu,Bo Wang,Jun-Fang Wu

DOI: https://doi.org/10.1117/12.2282040

2017-01-01

Abstract:We demonstrate that by appropriately exciting the multistability of the cascaded nonlinear cavities, a broad-bandwidth, reversible, and high-contrast-ratio optical diode can be achieved.
Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Hui Ma,Haotian Yang,Bo Tang,Maoliang Wei,Junying Li,Jianghong Wu,Peng Zhang,Chunlei Sun,Lan Li,Hongtao Lin

DOI: https://doi.org/10.3788/col202119.071301

IF: 2.56

2021-01-01

Chinese Optics Letters

Abstract:As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm waveband. The development of the 2 μm silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process.The designed micro-ring resonator with a 0.6 μm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 × 105. The propagation loss is calculated as 1.62 d B/cm. In addition,the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 μm with good performances.
Ultralow-power On-Chip All-Optical Fano Diode Based on Uncoupled Nonlinear Photonic-Crystal Nanocavities

Jingya Xie,Xiaoyong Hu,Feifan Wang,Yutian Ao,Wei Gao,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1088/2040-8986/aaa796

IF: 2.1

2018-01-01

Journal of Optics

Abstract:We achieved an ultralow-power Fano-like diode in integrated photonic circuits through two cascaded and uncoupled photonic-crystal microcavities, coated with a nonlinear layer constructed from polycrystalline indium-tin oxide doped with gold nanoparticles. The multicomponent nanocomposite layer helps to obtain an extremely large nonlinearity enhancement on account of the quantum confinement effect, hot-electron injection, and local-field enhancement effect. Thus, the strong nonlinearity enhancement, asymmetric Fano-like spectrum lineshape, and asymmetric light confinement for the forward and backward incidence cases guarantee the nonreciprocal transmission of signal light. A compact size of 7 mu m is maintained for the photonic-crystal microcavities and the transmission contrast reached 15 dB. Besides, we achieved 1.5kW cm(-2) operating threshold intensity (cut down by a thousand times). This work assists chip-integrated optical computing on the basis of nonlinear photonic-crystal microcavities.
Compact Photonic Crystal Nanobeam Cavity on Si3N4 Loaded LNOI Platform

Hua Zhong,Ruihuan Zhang,Yu He,Meng Tian,Yong Zhang,Yikai Su

DOI: https://doi.org/10.1109/oecc56963.2023.10209941

2023-01-01

Abstract:In this paper, we design and experimentally demonstrate a photonic crystal nanobeam cavity device based on the Si 3 N 4 loaded LNOI platform with a mode volume of 3.06 $\mu \mathrm{m}^{3}$, which is potential in achieving low power devices. The device shows an insertion loss of 0.89 dB, and a 3-dB bandwidth of 0.284 nm.
An All-Silicon Optical Diode

Jian Wang,Minghao Qi,Leo T. Varghese,Li Fan,Yi Xuan

DOI: https://doi.org/10.1109/icocn.2014.6987090

2014-01-01

Abstract:A silicon optical diode enables optical non-reciprocity through direction-dependent resonance shift of microrings based on the thermo-optic effectin silicon. We observe an ultra-high nonreciprocal transmission ratio of 40 dB with an improved design of the optical diode. One-way 10Gbps data transmission is realized based on the strong dispersion and attenuation associated with a resonant structure.
Silicon Photonic O-band (de)multiplexers with Flat-Passband

Nannan Ning,Xiaofei Wang,Qikai Huang,Hui Yu

DOI: https://doi.org/10.1117/12.2600444

2021-01-01

Abstract:Based on cascaded Mach-Zehnder lattice filter, an eight-channel silicon photonic (de-)multiplexer with flat passband is demonstrated in the O-band. The insertion loss of the device is -0.55~-2.48dB and the channel crosstalk is below -7dB. The FSR and channel spacing are about 36nm and 4.4nm respectively.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Chip-Integrated All-Optical Diode Based on Nonlinear Plasmonic Nanocavities Covered with Multicomponent Nanocomposite

Zhen Chai,Xiaoyong Hu,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1515/nanoph-2016-0127

IF: 7.5

2017-01-01

Nanophotonics

Abstract:Ultracompact chip-integrated all-optical diode is realized experimentally in a plasmonic microstructure, consisting of a plasmonic waveguide side-coupled two asymmetric plasmonic composite nanocavities covered with a multicomponent nanocomposite layer, formed directly in a plasmonic circuit. Extremely large optical nonlinearity enhancement is obtained for the multicomponent nanocomposite cover layer, originating from resonant excitation, slow-light effect, and field enhancement effect. Nonreciprocal transmission was achieved based on the difference in the shift magnitude of the transparency window centers of two asymmetric plasmonic nanocavities induced by the signal light, itself, for the forward and backward propagation cases. An ultralow threshold incident light power of 145 μW (corresponding to a threshold intensity of 570 kW/cm2) is realized, which is reduced by seven orders of magnitude compared with previous reports. An ultrasmall feature size of 2 μm and a transmission contrast ratio of 15 dB are obtained simultaneously.
Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Yang Chen,Thalia Dominguez Bucio,Ali Z. Khokhar,Mehdi Banakar,Katarzyna Grabska,Frederic Y. Gardes,Robert Halir,Inigo Molina-Fernandez,Pavel Cheben,Jian-Jun He

DOI: https://doi.org/10.1364/ol.42.003566

2017-01-01

Abstract:A silicon nitride waveguide is a promising platform for integrated photonics, particularly due to its low propagation loss compared to other complementary metal-oxide-semiconductor compatible waveguides, including silicon-on-insulator. Input/output coupling in such thin optical waveguides is a key issue for practical implementations. Fiber-to-chip grating couplers in silicon nitride usually exhibit low coupling efficiency because the moderate index contrast leads to weak radiation strengths and poor directionality. Here, we present the first, to the best of our knowledge, experimental demonstration of a recently proposed apodized-imaging fiber-to-chip grating coupler in silicon nitride that images an in-plane waveguide mode to an optical fiber placed at a specific distance above the chip. By employing amplitude and phase apodization, the diffracted optical field of the grating is matched to the fiber mode. High grating directionality is achieved by using staircase grating teeth, which produce a blazing effect. Experimental results demonstrate an apodized-imaging grating coupler with a record coupling efficiency of -1.5 dB and a 3 dB bandwidth of 60 nm in the C-band. (C) 2017 Optical Society of America
High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Yu Ping,Qiu Chen,Hu Ting,Qiu Hui-Ye,Ge Fang-Fang,Jiang Xiao-Qing,Yang Jian-Yi

DOI: https://doi.org/10.1088/0256-307x/30/10/104204

2013-01-01

Abstract:We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450 × 220nm single mode silicon ridge waveguide. Transmission spectrum measurement is performed by using the vertical fiber-grating coupling characterization method. The Q factor up to 2.6 × 104 is found by fitting the line shape of the transmission spectrum, and the normalized transmission of nearly 20% is achieved. Three-dimensional finite difference time domain calculations show that the modal volume of the fundamental mode is 1.1(λ/n)3. With the standard silicon waveguide width, the demonstrated 1D PhC cavity may be used as a building block for integrated photonic circuits and on-chip sensing applications.
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Biao Qi,Ping Yu.,Yubo Li,Xiaoqing Jiang,Mei Yang,Jianyi Yang

DOI: https://doi.org/10.1109/LPT.2011.2148704

2011-01-01

Abstract:A new nanocavity-based electrooptic modulator on silicon-on-insulator is proposed. This nanocavity is formed by a one-dimensional photonic crystal nanobeam cavity with a slot embedded. The slot lies in both the cavity and the distributed Bragg reflectors region. This results in an ultrasmall modal volume of 0.047 (λ/n)3 and a high Q-factor of 8.6×104. Another advantage of the structure is that polymers can be infiltrated into the slot. Accordingly, we rely on the fast and strong electrooptic effect of polymers, rather than on the free-carrier plasma dispersion effect of silicon. Analysis shows a modulator with a bandwidth of 86 GHz, a switching voltage of 0.2 V, and a length of only 14 μm can be obtained.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
On-Chip Optical Nonreciprocity Using An Active Microcavity

Xiaoshun Jiang,Chao Yang,Hongya Wu,Shiyue Hua,Long Chang,Yang Ding,Qian Hua,Min Xiao

DOI: https://doi.org/10.1038/srep38972

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Optically nonreciprocal devices provide critical functionalities such as light isolation and circulation in integrated photonic circuits for optical communications and information processing, but have been difficult to achieve. By exploring gain-saturation nonlinearity, we demonstrate on-chip optical nonreciprocity with excellent isolation performance within telecommunication wavelengths using only one toroid microcavity. Compatible with current complementary metal-oxide-semiconductor process, our compact and simple scheme works for a very wide range of input power levels from similar to 10 microwatts down to similar to 10 nanowatts, and exhibits remarkable properties of one-way light transport with sufficiently low insertion loss. These superior features make our device become a promising critical building block indispensable for future integrated nanophotonic networks.
Low-power All-Optical Diode in Asymmetric Nanocomposite Photonic Crystal Microcavities

Xiaoyong Hu,Zhiqiang Li,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1002/adfm.201002445

2012-01-01

Abstract:All-optical diode is realized in asymmetric nanocomposite photonic crystal microcavity by combining strong plasmonic responses of gold nanoparticles and all-optical tunability of microcavity. The threshold photon energy as low as 1.89 pJ is achieved.

An on-chip all silicon passive optical diode based on photonic crystal L3 cavities

Silicon optical diode based on cascaded photonic crystal cavities.

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

An All-Silicon Passive Optical Diode.

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

On-chip optical diode based on silicon photonic crystal heterojunctions

Optical diode based on cascaded nonlinear nanocavities

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Ultralow-power On-Chip All-Optical Fano Diode Based on Uncoupled Nonlinear Photonic-Crystal Nanocavities

Compact Photonic Crystal Nanobeam Cavity on Si3N4 Loaded LNOI Platform

An All-Silicon Optical Diode

Silicon Photonic O-band (de)multiplexers with Flat-Passband

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Chip-Integrated All-Optical Diode Based on Nonlinear Plasmonic Nanocavities Covered with Multicomponent Nanocomposite

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

High-speed compact silicon digital optical switch with slot structure

On-Chip Optical Nonreciprocity Using An Active Microcavity

Low-power All-Optical Diode in Asymmetric Nanocomposite Photonic Crystal Microcavities