Abstract:High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and HF. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a MOSFET are analyzed to obtain a physics-based RF model. The procedures of the HF model parameter extraction are also developed. A subcircuit RF model based on the discussed approaches can be developed with good model accuracy. Further, noise modeling is discussed by analyzing the theoretical and experimental results in HF noise modeling. Analytical calculation of the noise sources has been discussed to understand the noise characteristics, including induced gate noise. The distortion behavior of MOSFET and modeling are also discussed. The fact that a MOSFET has much higher “low-frequency limit” is useful for designers and modelers to validate the distortion of a MOSFET model for RF application. An RF model could well predict the distortion behavior of MOSFETs if it can accurately describe both dc and ac small-signal characteristics with proper parameter extraction.

Large-signal MOSFET Modeling Using Frequency-Domain Nonlinear System Identification

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Scalable RFCMOS Model for 90 Nm Technology

Accurate Small-Signal Model and Its Parameter Extraction in Rf Silicon Mosfets

Nonlinear Modeling of RF Switch Based on COMSOL Parameter Extraction

MOSFET Modeling for RF IC Design

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

A Lumped, Large-Signal Dynamic Model of the Mosfet for Rf Circuit Simulation

A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

Accurate Large-Signal FET Model Tailored for Switching-Mode Power Amplifier Design.

High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

An Accurate Large-Signal Model for Rf Soi Ldmos Including Self-Heating Effect

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

Modeling of Sic Mosfet in Matlab/Simulink

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model

Advanced MOSFET Model Based on Artificial Neural Network