Performance Enhancement of FET-Based Photodetector by Blending P3HT With PMMA

Li Zhang,Dan Yang,Yishan Wang,Haowei Wang,Taojian Song,Chunjie Fu,Shengyi Yang,Jinquan Wei,Ruibin Liu,Bingsuo Zou
DOI: https://doi.org/10.1109/LPT.2015.2427796
IF: 2.6
2015-01-01
IEEE Photonics Technology Letters
Abstract:In this letter, we presented a solution-processed photodetector with a configuration of field-effect transistor (FET) ITO/poly(4-vinylphenol) (PVP)/poly(3-hexylthiophene) (P3HT): poly(methyl methacrylate) (PMMA)/Au in which PVP acts as a dielectric layer and different PMMA content (20 wt.% ~ N 60 wt.%) in P3HT as active layer. The best electrical property of the photodetector under no illumination...
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