Abstract:Indium arsenide quantum dots, which typically emit in the near-infrared, have been utilized in various optoelectronics and biomedical applications, such as covert illumination, optical communication, and deep-tissue imaging. While theory predicts that further quantum confinement through size reduction could enable visible light emission, systems with larger optical bandgaps have not been realized. Here, we report a method of preparing highly luminescent, visible-light-emitting In(Zn)As/ZnSe/ZnS QD, using a low-temperature nanocluster synthesis approach. Each QD contains an ultraconfined In(Zn)As nanocluster and fluoresces at tunable wavelengths between 538 and 640 nm with a high photoluminescence quantum efficiency of 58%. We confirm, through DFT and spectroscopic analysis, that the strong confinement effects in the few-atom-wide In(Zn)As nanoclusters are responsible for the significant spectral shift from the near-infrared to the visible region. These findings suggest that broader-than-expected optical tuning may now be achievable in other quantum-confined semiconductor systems, which could lead to a wider scope of functional applications in optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c01223?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01223</a>.Materials and methods, control experiments, TRPL measurements of In(Zn)As/ZnSe/ZnS QDs at the successive stages of core–shell growth, size distribution of the as-synthesized In(Zn)As/ZnSe/ZnS QD, elemental analysis of In(Zn)As/ZnSe/ZnS QD at different growth stages, XRD pattern of In(Zn)As/ZnSe/ZnS QD at different growth stages, TEM and HR-TEM images of ZnSe dots with increasing ratio of carboxylate ligand: zinc, additional DFT calculations (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c01223/suppl_file/nl1c01223_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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