Abstract:In this paper, impedance spectroscopy study was performed to establish the electrical property and microstructure relations of the as-deposited and post-annealed polycrystalline CCTO films prepared on Pt/Ti/SiO2/Si (100) substrates by pulsed-laser deposition (PLD). Our results demonstrated that the as-deposited polycrystalline CCTO film was made of insulating grain boundaries with semiconducting grains, indicating that the high-dielectric-constant is attributed to the barrier layer capacitor (BLC) effects. The simple resistor-capacitor (RC) equivalent circuit and the modified constant phase element (CPE) circuit were used to describe the impedance spectroscopy, and excellent agreement between the calculated and measured curves was obtained in the CPE circuit. The resistance and capacitance of the grains and grain boundaries can be tuned by changing the annealing atmosphere and temperature. Under oxygen-absent annealing atmosphere, the electric resistances of the grain boundaries changed greatly but the resistance of the grains has almost no change. While under oxygen annealing atmosphere, the reverse happened. On the basis of this result, it is demonstrated that the origin of the semiconductivity of the grains in CCTO polycrystalline films arises from their oxygen-loss, while the grain boundaries are close to oxygen- stoicheometry.

Rectifying Characteristics And Transport Behavior In A Schottky Junction Of Cacu3ti4o12 And Pt

Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu 3 Ti 4 O 12 and Pt

Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Impedance spectroscopy study on post-annealing-tuned polycrystalline CaCu3Ti4O12 films: Evidence of Barrier Layer Capacitor Effects

Localized Polarons and Conductive Charge Carriers: Understanding CaCu3Ti4O12 over a Broad Temperature Range

Investigation on the dielectric properties of CaCu3TixO12

Polaron relaxation and non-ohmic behavior in CaCu3Ti4O12 ceramics with different cooling methods

Processing influence in the CaCu3Ti4O12 electrical properties

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Leakage current characteristics of (Ba0.65Sr0.35)TiO3 thin films with Pt electrodes

Effect of Cr Addition on the Structure and Electrical Properties of CaCu3Ti4O12 NTC Thermistor

Giant Dielectric Permittivity and Non-Linear Electrical Behavior in CaCu3Ti4O12 Varistors from the Molten-Salt Synthesized Powder

Analysis of Electrical Properties of Post-Annealed Polycrystalline CaCu 3 Ti 4 O 12 Films by Impedance Spectroscopy

Backward Rectifying And Forward Schottky Behavior At Au/Nb-1.0 Wt %-Doped Srtio3 Interface

Effects of Postanneal Conditions on the Dielectric Properties of CaCu3Ti4O12 Thin Films Prepared on Pt/Ti/SiO2/Si Substrates

Electrical Heterogeneity in CaCu3Ti4O12 Ceramics Fabricated by Sol–gel Method

Dielectric and Non-Ohmic Properties of CaCu3Ti4O12 Ceramics Modified with NiO, SnO2, SiO2, and Al2O3 Additives

Complex Permittivity and Relaxation Processes in CaCu3Ti(4−)Mn O12

Structure, Properties, And Impedance Spectroscopy Of Cacu3ti4o12 Ceramics Prepared By Sol-Gel Process

The Novel Effects of Cu-deficient on the Dielectric Properties and Voltage–current Nonlinearity in CaCu3Ti4O12 Ceramics

Grain Boundary Behavior in Varistor-Capacitor Tio2-Rich Cacu3ti4o12 Ceramics