Abstract:<p>Gallium nitride (GaN) is a promising semiconductor for the fabrication of a wide range of electronic and optoelectronic devices. For GaN grown on widely used sapphire substrate, bundles of threading dislocations (TDs) are induced by thermal and lattice mismatch. These TDs intersect the surface of GaN and degrade the internal quantum efficiency (IQE) of GaN-based devices. To address this issue, two innovative techniques are proposed for effective filtration of TDs. First, a novel design of serpentine channel pattern sapphire substrate (SCPSS) is applied for effective filtration of TDs at the interface. Transmission electron microscopy (TEM) indicated that SCPSS plays an effective role in the filtration of TDs; however, cathodoluminescence (CL) revealed that many TDs still intersect the surface of GaN. To further optimize the growth of GaN, the temperature was ramped down to the intermediate level and an interlayer (IL) of InGaN was introduced near the window of SCPSS. CL analysis indicated that additional use of InGaN-IL further reduced the TDs. Raman microscopy showed that incorporation of IL lead to drastic reduction in compressive stress. Atomic force microscopy (AFM) confirmed the achievement of excellent surface topography with InGaN-IL. Moreover, it is observed that growth of GaN by SCPSS is better than conventional growth because of improved surface morphology and low TDs. The reduction of TDs by SCPSS and InGaN-IL is an effective approach for the growth of high-quality GaN towards efficient devices.</p>

Deflection Reduction of Gan Wafer Bowing by Coating or Cutting Grooves in the Substrates

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment with an Optimized Surface Structure Design

Optimized Surface Structure by Laser Treatment for the Relaxation of Residual Stress in Bent Gan Film

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Critical Thickness of GaN Film in Controllable Stress-Induced Self-Separation for Preparing Native GaN Substrates

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Thermo-mechanical Solution of Film/substrate Systems under Local Thermal Load and Application to Laser Lift-off of GaN/sapphire Structures

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Anisotropic Defect Reduction in Non-Polar A-Plane Gan Grown by Hydride Vapor Phase Epitaxy on Maskless Patterned Templates

High-resolution X-Ray Diffraction Studies of Highly Curved GaN Layers Prepared by Hydride Vapor Phase Epitaxy

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire

Occurrence of Cubic Gan and Strain Relaxation in Gan Buffer Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

In Situ Site-Speci fi c Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar ( 11 2̅ 2 ) GaN

Reduction of Threading Dislocations in AlGaN Layers Grown on AlN∕sapphire Templates Using High-Temperature GaN Interlayer

Thermal stress modelling of diamond on GaN/III-Nitride membranes