Abstract:<p>Gallium nitride (GaN) is a promising semiconductor for the fabrication of a wide range of electronic and optoelectronic devices. For GaN grown on widely used sapphire substrate, bundles of threading dislocations (TDs) are induced by thermal and lattice mismatch. These TDs intersect the surface of GaN and degrade the internal quantum efficiency (IQE) of GaN-based devices. To address this issue, two innovative techniques are proposed for effective filtration of TDs. First, a novel design of serpentine channel pattern sapphire substrate (SCPSS) is applied for effective filtration of TDs at the interface. Transmission electron microscopy (TEM) indicated that SCPSS plays an effective role in the filtration of TDs; however, cathodoluminescence (CL) revealed that many TDs still intersect the surface of GaN. To further optimize the growth of GaN, the temperature was ramped down to the intermediate level and an interlayer (IL) of InGaN was introduced near the window of SCPSS. CL analysis indicated that additional use of InGaN-IL further reduced the TDs. Raman microscopy showed that incorporation of IL lead to drastic reduction in compressive stress. Atomic force microscopy (AFM) confirmed the achievement of excellent surface topography with InGaN-IL. Moreover, it is observed that growth of GaN by SCPSS is better than conventional growth because of improved surface morphology and low TDs. The reduction of TDs by SCPSS and InGaN-IL is an effective approach for the growth of high-quality GaN towards efficient devices.</p>

Reduction of Threading Dislocations in AlGaN Layers Grown on AlN∕sapphire Templates Using High-Temperature GaN Interlayer

Two Coexisting Mechanisms Of Dislocation Reduction In An Algan Layer Grown Using A Thin Gan Interlayer

Reduction in Threading Dislocation Densities in Aln Epilayer by Introducing A Pulsed Atomic-Layer Epitaxial Buffer Layer

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Reduction Of Tensile Stress In Gan Grown On Si(111) By Inserting A Low-Temperature Aln Interlayer

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Low Density of Threading Dislocations in Aln Grown on Sapphire