Abstract:The drawbacks of low thermal stability and high power consumption pose challenges to the application of phase change materials in the automotive industry and in‐memory computing. Numerous studies are conducted to enhance the performance of these materials. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

Instability Of Nitrogen Doped Sb2te3 For Phase Change Memory Application

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

The fabrication and properties of N-doped Sb2Te3 phase-change materials prepared by pulsed laser deposition

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Microstructure Evolution of the Phase Change Material Tisbte

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Tixsb2te Thin Films for Phase Change Memory Applications

Microstructure Evolution and Crystallography of the Phase-Change Material TiSbTe Films Annealed in Situ

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Materials For Phase-Change Memory With Elevated Temperature Stability

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Thermal Properties And Structure Of Tega2sb7 Thin Films For Phase-Change Memory

Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications