Abstract:Nanostructures with rich physical properties are promising for applications in electronics, chemistry, energy and bioscience, etc. The relationship and manipulation among different nanostructures as a hot topic attract many attentions. However, the transformation, such as nucleation events and metastable states, is rarely observed. The electron beam‐induced perturbations of the system can be used to manipulate nanostructures by controlling the properties of the focused electron beam. Here, taking advantage of an electron beam to induce the direct growth of bismuth (Bi) nanodroplets on the Bi nanowire, the transformation between nucleation and decomposition processes within the nanoparticles is studied by high‐resolution transmission electron microscopy (HRTEM). The results show that the nucleation occurred at the edge of the Bi nanodroplet, and the metastable state in coalesced area introduced the additional interfacial states, determining the nucleation and decomposition of the nanostructure. This study helps to observe the critical process, reduce the gap between theory and experiment for reducing interfacial area to improve the energy storage efficiency. The reversible phase transition of bismuth on Bi nanowire is manipulated by e‐beam irradiation in a transmission electron microscope. Taking advantage of an electron beam to induce the direct growth of Bi nanodroplets on the Bi nanowire, the transformation between solidification and liquidation processes within the nanoparticles is studied by high‐resolution transmission electron microscopy (HRTEM). The results show that the metastable state in coalesced area introduced additional interfacial states, determining the solidification and liquidation of the nanostructure.

Bismuth Nano-Droplets for Group-V Based Molecular-Beam Droplet Epitaxy

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Formation of GaAs Double Rings Through Gallium Migration and Nanodrilling

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Synthesis of Boron and Boride Compounds Nanowire Arrays by Chemical Vapor Deposition

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle

Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets

Kinetics and the crystallographic structure of bismuth during liquefaction and solidification on the insulating substrate

Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Axial GaAs/Ga(As,Bi) Nanowire Heterostructures

The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles

Observation of Focused Ion Beam-Induced Artifacts in Transmission Electron Microscopy Samples Leading to the Epitaxial Growth of AlGaSb Quantum Dots on the GaSb Substrate

Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy

Metal Droplet Effects on the Composition of Ternary Nitrides