Abstract:Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on-and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates.

Optical Precursors With Tunneling-Induced Transparency In Asymmetric Quantum Wells

Quantum-Coherence-Assisted Tunable On- and Off-Resonance Tunneling Through a Quantum-Dot-Molecule Dielectric Film

Tuning Quantum Dot States with Optical Fields

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Tunable Self-Focusing and Self-Defocusing Effects in a Triple Quantum Dot Via the Tunnel-Enhanced Cross-Kerr Nonlinearity

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Optical Confinement Via Quantum Well Intermixing On A Buried Ingaas/Ingaasp Heterostructure

Asymmetric 1D and 2D tunneling induced grating in Quantum Dot system

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Optical Breakdown of InGaAsP/InP Based Multiquantum Well Optical Attenuators

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Spectral Features of the Tunneling-Induced Transparency and the Autler-Townes Doublet and Triplet in a Triple Quantum Dot

Resonant Inelastic Tunneling Using Multiple Metallic Quantum Wells

Tunneling Induced Transparency and Controllable Group Velocity in Triple and Multiple Quantum-Dot Molecules

Lo-Phonon-Assisted Tunneling In Asymmetric Double-Well Structures With Thick Barriers

Tunneling Modulation of Transistor Lasers: Theory and Experiment