Abstract:High-mobility materials and non-traditional device architectures are of key interest in the semiconductor industry because of the need to achieve higher computing speed and low power consumption. In this article, we present an integrated approach using directed self-assembly (DSA) of block copolymers (BCPs) to form aligned line-space features through graphoepitaxy on germanium on insulator (GeOI) substrates. Ge is an example of a high mobility material (III–V, II–VI) where the chemical activity of the surface and its composition sensitivity to etch processing offers considerable challenges in fabrication compared to silicon (Si). We believe the methods described here afford an opportunity to develop ultrasmall dimension patterns from these important high-mobility materials. High-quality metal oxide enhanced pattern transfer to Ge is demonstrated for the realization of nanofins with sub-10 nm feature size. Graphoepitaxial alignment of a poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP was achieved using predefined hydrogen silsesquioxane (HSQ) topography at a GeOI substrate. Subsequent impregnation of the aligned BCP templates with a salt precursor in situ and simple processing was used to generate robust metal oxide nanowire (e.g., Fe3O4, γ-Al2O3, and HfO2) hardmask arrays. Optimized plasma based dry etching of the oxide modified substrate allowed the formation of high aspect ratio Ge nanofin features within the HSQ topographical structure. We believe the methodology developed has significant potential for high-resolution device patterning of high mobility semiconductors. We envision that the aligned Ge nanofin arrays prepared here via graphoepitaxy might have application as a replacement channel material for complementary metal–oxide–semiconductor (CMOS) devices and integrated circuit (IC) technology. Furthermore, the low capital required to produce Ge nanostructures with DSA technology may be an attractive route to address technological and economic challenges facing the nanoelectronic and semiconductor industry.

Self-assembled Ordered Arrays of Nanoscale Germanium Esaki Tunnel Diodes

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

One-dimensional Germanium Nanowires for Future Electronics

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi$_2$N$_4$/HfSi$_2$N$_4$/NbSi$_2$N$_4$ lateral heterojunction diode

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Quantum Tunneling Behavior Of Nanocrystalline Silicon/Crystalline Silicon Heterostructure Diode

Nanodevice design and electronic transport properties of Ge2Sb2-based monolayers

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers

Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement

High density germanium nanowire assemblies: contact challenges and electrical characterization

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.