Abstract:Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 108 and on/off ratio over 108 at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 105 due to its ultralow forward current and a comparable photodetectivity of 3.8 × 1010 Jones. In addition, the response time of such a photodetector reaches 8 μs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09593?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09593</a>.Corresponding AFM image of the PtS2/WSe2 vdWHs, calculation of Pt to S ratio for the PtS2 layer and W to Se ratio for the WSe2via EDS mapping, influence of layer thickness on the I–V characteristic and rectification ratio of PtS2/WSe2 vdWH diode, electrical characterizations of the PtS2/WSe2 vdWHs, individual PtS2, and WSe2 FET, influence of layer position on the I–V characteristic and rectification ratio of PtS2/WSe2 vdWH diode, KPFM characterizations of the PtS2/WSe2 vdWHs, photoresponse of the transfer characteristics of the heterodiode, self-powered photoresponse characterizations of the PtS2/WSe2 vdWH device under 635 nm laser illumination, illumination-wavelength-dependent photoresponsivity of the PtS2/WSe2 vdWHs, photocurrent response of the PtS2/WSe2 vdWHs under near-infrared laser illumination (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09593/suppl_file/nn0c09593_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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