Broken-gap Energy Alignment in Two-dimensional van der Waals Heterostructures for Multifunctional Tunnel Diodes

Patrick David Taylor,Sherif Abdulkader Tawfik,Michelle Jeanette Sapountzis Spencer

DOI: https://doi.org/10.1039/d4cp01174k

IF: 3.3

2024-07-19

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) materials are promising platforms for future nano electronic technologies as they provide the building blocks for atomically thin devices, including switches, amplifiers, and oscillators. When 2D materials are layered on top of each other as hybrid van der Waals heterostructures (vdWHs), they can provide unique properties not possessed by the individual layers. Here we consider the vdWHs HfS2/MoTe2, HfS2/WTe2, 1T-HfS2/WTe2, TiS2/WSe2, TiS2/ZnO, and TiSe2/WTe2 as potential Esaki (or tunnel) diodes that can be incorporated into electronic devices. Using density functional theory calculations, we establish that the band alignments in these systems form broken-band heterojunctions. We show the electronic properties of the systems can be effectively modulated through application of lateral strain or electric field. Importantly, we demonstrate that the band gap of the vdWHs can be widened by up to 0.65 eV through application of an electric field of -1 to +1 V/Å. This work demonstrates a set of 6 vdWHs with properties suitable for application as 2D Esaki tunnel diodes, 4 of which could be applied as multifunctional devices. These materials not only offer new device properties, but their small dimensions allow for the creation of ultrathin devices.

chemistry, physical,physics, atomic, molecular & chemical