Nanodevice design and electronic transport properties of Ge2Sb2-based monolayers

Jiabao Liao,Yifan Gao,Yilian Li,Yi Wu,Kun Wang,Chunlan Ma,Tianxing Wang,Xiao Dong,Zhongyao Li,Yipeng An
DOI: https://doi.org/10.1016/j.physe.2023.115681
2023-06-01
Physica E: Low-Dimensional Systems and Nanostructures
Abstract:Several conceptual nanodevices based on the four-atom layer α- and β-Ge2Sb2 monolayers are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Sb2-based p-n junction diodes exhibit a significant rectifying effect with a high rectification ratio that can be further enhanced by increasing the doping concentration. Their p-i-n junction transistors show a field-effect behavior with a stronger rectifying effect and more substantial electronic anisotropy. Moreover, they also display strong photoelectronic responses in the visible light region and even among the AM1.5 spectrum, making them excellent candidates as photovoltaic materials and photoelectronic transistors. Our findings uncover the multifunctional nature of four-atom layer Ge2Sb2 monolayers, promising their extensive applications in future flexible semiconductor devices.
physics, condensed matter,nanoscience & nanotechnology
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