Diameter-dependent internal gain in ZnO micro/nanowires under electron beam irradiation.

Qi Zhang,Junjie Qi,Xin Li,Yue Zhang
DOI: https://doi.org/10.1039/c1nr10459d
IF: 6.7
2011-01-01
Nanoscale
Abstract:We observed a conductivity gain in intrinsic ZnO micro/nanowires at characteristic diameter scales from nanoscale to microscale by employing metal-semiconductor-metal structures with ohmic contacts under electron beam irradiation. The conductivity is enhanced under electron beam illumination and the magnitude is inversely proportional to the micro/nanowire diameter from 400 nm to 1300 nm at constant radiation intensity. We also introduced a model to simulate the diameter-dependent electric potential distribution. We attribute these observations to the variation of the effective electron carrier density upon varying diameters of ZnO micro/nanowires, as a result of field effects from the diameter-dependent population of the surface-trapped holes.
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