Abstract:Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much wider than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five known phases (α, β, γ, d, ε/κ). The breakdown field of β-Ga2O3 is predicted to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. Single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Metalorganic chemical vapor deposition (MOCVD) growth technique was demonstrated to produce high quality β-Ga2O3 thin films and its ternary (AlxGa1-x)2O3 alloys. Control of background and n-type doping in β-Ga2O3 will be discussed. Record carrier mobilities of 194 cm2/V·s at room temperature and ~10,000 cm2/V·s at low temperature were measured for MOCVD β-Ga2O3 thin films. Growth and fundamental understanding of β-(AlxGa1-x)2O3 are still limited. The incorporation of Al in beta-phase Ga2O3 has not been well understood, although it was predicted up to 60% of Al composition could be incorporated into β-Ga2O3. MOCVD growth of β-AlGaO targeting for Al composition of > 40% will be discussed. N-type doping capability as a function of Al composition in (AlxGa1-x)2O3 is another important fundamental question. Charge carrier transport properties in (AlxGa1-x)2O3 will be discussed. In addition, MOCVD growth of different phases of Ga2O3 and AlGaO will be presented. Acknowledgement: The authors acknowledge the funding support from the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 2019753, 1755479).

MOCVD Growth and Characterizations of BxAl1−xAs and BxAl1−x−yInyAs Alloys

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

The Behavior of Dopant Incorporation and Internal Strain in AlxGa1−xAs0.03Sb0.97 Grown by Molecular Beam Epitaxy

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

The roles of Bi in InAs and InAsBi nanostructure growth

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility

Effect of Growth Condition on Electrical-Properties of Mbe and Mocvd-Alinas

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

(In0.52al0.48)1−xmnxas Diluted Magnetic Semiconductor Grown on InP Substrates

Growth of InAs NWs with controlled morphology by CVD

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films