Abstract:Metal nanowire fabrication has drawn tremendous attention in recent years due to its wide application in electronics, optoelectronics, and plasmonics. However, conventional laser fabrication technologies are limited by diffraction limit thus the fabrication resolution cannot meet the increasingly high demand of modern devices. Herein we report on a novel method for high-resolution high-quality metal nanowire fabrication by using Hermite-Gaussian beam to ablate metal thin film. The nanowire is formed due to the intensity valley in the center of the laser beam while the surrounding film is ablated. Arbitrary nanowire can be generated on the substrate by dynamically adjusting the orientation of the intensity valley. This method shows obvious advantages compared to conventional methods. First, the minimum nanowire has a width of ~60 nm (≈1/13 of the laser wavelength), which is much smaller than the diffraction limit. The high resolution is achieved by combining the ultrashort nature of the femtosecond laser and the low thermal conductivity of the thin film. In addition, the fabricated nanowires have good inside qualities. No inner nanopores and particle intervals are generated inside the nanowire, thus endowing the nanowire with good electronic characteristics: the conductivity of the nanowires is as high as 1.2×10 7 S/m (≈1/4 of buck material), and the maximum current density is up to 1.66×10 8 A/m 2 . Last, the nanowire has a good adhesion to the substrates, which can withstand ultrasonic bath for a long time. These advantages make our method a good approach for high-resolution high-quality nanowire fabrication as a complementary method to conventional lithography methods.

Fabrication of Periodic Metal Nanowires with Microscale Mold by Nanoimprint Lithography.

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Fabrication of superconducting nanowires based on ultra-thin Nb films by means of nanoimprint lithography

Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Conducting Polymer Nanowires Fabricated by Edge Effect of Nil

Fabrication of metallic nanostructures by negative nanoimprint lithography

Metal nanoparticle wires formed by an integrated nanomolding-chemical assembly process: fabrication and properties.

Micro/Nanoscale Structure Fabrication by Direct Nanoimprinting of Metallic and Semiconducting Nanoparticles

Direct Nanoimprinting of Metal Nanoparticles for Nanoscale Electronics Fabrication.

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

A facile nanowire fabrication approach based on edge lithography

Periodic nanowire wide sample with controllable characteristic dimension and manufacturing method thereof

Large-area and Uniform Amorphous Metallic Nanowire Arrays Prepared by Die Nanoimprinting

Fabrication of Metal Nano-Wires by Laser Interference Lithography Using a Tri-Layer Resist Process

Nanoimprint lithography technology

In Situ Fabrication of Highly Conductive Metal Nanowire Networks with High Transmittance from Deep-Ultraviolet to Near-Infrared.

Mask-free, vacuum-free fabrication of high-conductivity metallic nanowire by spatially shaped ultrafast laser (Conference Presentation)

Fabrication of metallic nanodots in large-area arrays by mold-to-mold cross imprinting (MTMCI).

Controllable Metal Nanodots Array Fabricatied by SDS-assisted Nanosphere Lithography and Its Application for Nanowires Growth

Morphology and Structure Evolution of Metallic Nanowire Arrays Prepared by Die Nanoimprinting

Fabrication of Carbon Nanotube Arrays for Field Emission and Sensor Devices by Nanoimprint Lithography