Abstract:Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

Negative differential resistance in an (8, 0) carbon/boron nitride nanotube heterojunction

Negative differential resistance in nanotube devices

Negative Differential Resistance in Parallel Single-Walled Carbon Nanotube Contacts

Negative Rectification and Negative Differential Resistance in Nanoscale Single-Walled Carbon Nanotube P-N Junctions

Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

Effect of Length and Size of Heterojunction on the Transport Properties of Carbon-Nanotube Devices

Negative Differential Resistance Behavior of Thiolated Borazine Bonding with Gold Electrodes

Changes of Coupling Between the Electrodes and the Molecule under External Bias Bring Negative Differential Resistance

Negative Differential Resistance in GeSi Core-Shell Transport Junctions: the Role of Local Sp(2) Hybridization.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Electrode Conformation-Induced Negative Differential Resistance and Rectifying Performance in A Molecular Device

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

Negative Differential Resistance Induced by Intermolecular Interaction in a Bimolecular Device

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Graphene Nanoribbon As A Negative Differential Resistance Device

Negative Differential Resistance Behaviors in Porphyrin Molecular Junctions Modulated with Side Groups

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene