Abstract:Indium tin oxide (ITO) thin films were deposited on glass substrates by ion beam sputter deposition method in three different deposition conditions [(i) oxygen (O2) flow rate varied from 0.05 to 0.20sccm at a fixed argon (1.65sccm) flow rate, (ii) Ar flow rate changed from 1.00 to 1.65sccm at a fixed O2 (0.05sccm) flow rate, and (iii) the variable parameter was the deposition time at fixed Ar (1.65sccm) and O2 (0.05sccm) flow rates]. (i) The X-ray diffraction (XRD) patterns show that the ITO films have a preferred orientation along (400) plane; the orientation of ITO film changes from (400) to (222) direction as the O2 flow rate is increased from 0.05 to 0.20sccm. The optical transmittance in the visible region increases with increasing O2 flow rate. The sheet resistance (Rs) of ITO films also increases with increasing O2 flow rate; it is attributed to the decrease of oxygen vacancies in the ITO film. (ii) The XRD patterns show that the ITO film has a strong preferred orientation along (222) direction. The optical transmittance in the visible spectral region increases with an increase in Ar flow rate. The Rs of ITO films increases with increasing Ar flow rate; it is attributed to the decrease of grain size in the films. (iii) A change in the preferred orientations of ITO films from (400) to (222) was observed with increasing film thickness from 314 to 661nm. The optical transmittance in the visible spectral region increases after annealing at 200°C. The Rs of ITO film decreases with the increase of film thickness.

The Microstructure, Resistivity and Infrared Emissivity of Ito Film with O/Ar Ratio Variation in Al2o3 Buffer Layer

Influence of Al2o3 Buffer Layers on the Properties of Indium-Tin Oxide Films on Pet Substrate by Rf-Magnetron Sputtering

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Optical Property and the Relationship Between Resistivity and Surface Roughness of Indium Tin Oxide Thin Films

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Effect of the ZnO buffer layer thickness on AZO film properties

Optimizing Gas Parameters of Low-resistance ITO Films Prepared by DC Magnetron Sputtering

Study on Adhesion and Electro-Optical Properties of ITO Films on Flexible PET Substrate

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

Microstructure and Resistivity of Low Temperature Deposition Ito Films on Pet Substrate by Magnetron Sputtering

Transmittance and Electromagnetic Shielding of ITO Films Deposited at Low Temperature

The Effects Of Substrate Bias And Reactive Gas Partial-Pressure On The Resistivity Of Sputtered Ito Films

Effects of the Variations of Oxide Structure on the Electrical and Optical Properties of ITO Films

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

Effects of Non-Continuous Tio(2) Buffer Layers on Structural and Electrical Properties of Indium Tin Oxide Thin Films

Effect of Argon to Oxygen Ratio on the Properties of Tungsten Oxide Films Prepared by Direct Current Reactive Magnetron Sputtering

Influence of film thickness on the texture, morphology and electro-optical properties of indium tin oxide films

Optoelectronic effect of Al-based buffer layers on Al-doped ZnO thin transparent conductive films on flexible substrates

Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

INFLUENCE OF PROCESS PARAMETERS ON OPTICAL AND PHYSICAL PROPERTIES OF ITO THIN FILM