Tunnel Magnetoresistance Effect in $\hbox{cofeb/mgalo}_{\rm X}/\hbox{cofeb}$ Magnetic Tunnel Junctions

Houfang Liu,Qinli Ma,Syed Rizwan,Dongping Liu,Shouguo Wang,Xiufeng Han
DOI: https://doi.org/10.1109/tmag.2011.2157814
IF: 1.848
2011-01-01
IEEE Transactions on Magnetics
Abstract:Magnetic tunnel junctions (MTJs) with the core structure of CoFeB/MgAlOx/CoFeB were fabricated using magnetron sputtering technique. The MgAlOx tunnel barrier was obtained by plasma oxidation of an Mg/Al bilayer in an Ar + O-2 atmosphere. Series of MTJs were fabricated with different Mg layer thicknesses (t(Mg)), and Al layer thickness was fixed at 1.3 nm. The annealing effect on the tunneling magnetoresistance (TMR) ratio was investigated, and TMR ratio of 65% at room temperature (RT) was shown when it was annealed at 375 degrees C with the t(Mg) = 0.5 nm. The temperature dependence of conductance can be fit by the magnon-assisted tunneling model by adding spin independent tunneling contribution for the samples investigated here, and the spin independent conductance G(SI) varies with t(Mg), possibly due to less oxidation for thicker Mg layer.
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