Overload Protection Design of High-Sensitivity Pressure Sensor

CHUAI Rongyan,SUN Rui,LIU Xiaowei,WANG Jian
DOI: https://doi.org/10.3969/j.issn.1004-1699.2011.05.010
2011-01-01
Abstract:In microelectromechanical systems(MEMS),the pressure sensor made by the sacrificial layer technique has advantages such as small chip size and high sensitivity,which nevertheless results in the difficulty to increase the overload ability.Thus,the stress distribution on the elastic thin film of the sacrificial layer piezoresistive pressure sensor was simulated and analyzed by the finite-element analysis using both static linear and nonlinear contact methods.Through the combination of these two methods,the stress distribution was simulated accurately under the state of overload.Based on the analysis results,a structural design method was proposed,which can increase the overload ability to about 180%~220%.
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