Dynamic performance of silicon Mach-Zehnder electro-optic modulator with two silicon layers

Muping Song,Hang Xie,JiChao Yang
DOI: https://doi.org/10.3788/CJL201138.s105001
2011-01-01
Abstract:Silicon photonics is a novel technique for large-scale optic-electronic integration, with which most kinds of optical devices can be designed. Based on free-carrier plasma dispersion, silicon Mach-Zehnder electro-optic modulator (MZM) can achieve high modulation speed over 10 GHz. Considering the need for modulation speed and power consumption, a kind of silicon MZM based on MOS capacitor electrodes is studied by a simulation method combining electric and optic analytic model. The results show that under the driving voltage of -2 V, when the doping concentration is 1×10 15 cm -3, the effective refractive index change of the optical waveguide in silicon MZM is about 1.05×10 -5, which results in single modulation arm length of 3.68 cm to realize V π and the loss of less than 0.84 dB/cm. When doping concentration is 5×10 15 cm -3, the effective refractive index change is only 0.86×10 -5, which results in the V π length of 4.51 cm and the loss of about 1.36 dB/cm. And varied capacitor electrode structures of silicon MZM may make the visible difference of the modulation performance, including the rise and fall time.
What problem does this paper attempt to address?