Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Research on removal phosphorus from polysilicon and process development by vacuum induction melting

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

Low-temperature enhancement in the extraction of phosphorus from metallurgical-grade silicon by simultaneously re-constructing phosphorus-rich phases of Ca3P2 and CaAl2Si2-P

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

Removal of metal impurities from diamond wire saw silicon powder by vacuum electromagnetic directional solidification

Separation of phosphorus from metallurgical-grade silicon via micro negative pressure during oxidative ladle refining

Effect and Mechanism of Dephosphorization in Molten Silicon under Different Pressure Conditions

Progress in Preparation Technology of Polysilicon

The use of vacuum refining to separate Ca, Al, and P from crude metallurgical grade silicon

Kinetic Characterization of Phosphorus Removal from the Surface of Metallurgical Grade (mg) Silicon Droplets During Electromagnetic Levitation

Numerical and Experimental Study of Vacuum Directional Solidification Purification Process for Sog-Si in Metallurgical Route

Experimental Study on Phosphorus Removal from Ferrosilicon Alloys under Electromagnetic Levitation

Recycling of silicon scraps by electron beam melting coupled with directional solidification and its mechanism of impurity removal

Separation and purification of silicon from cutting kerf-loss slurry waste by electromagnetic and slag treatment technology

Study on the Removal of Impurities in Silicon by Electrorefining

KEY FACTORS FOR THE SEPARATION OF SILICON AND IRON DURING PHOSPHORUS RECOVERY FROM SLAG DISCHARGED FROM THE DOUBLE-SLAG REFINING PROCESS

Study on the Separation and Sedimentation Performance of Silicon from Diamond Wire Saw Silicon Powder Slurry

Recycling of kerf loss silicon: An optimized method to realize effective elimination of various impurities

Thermodynamic Assessment of Phosphorus Removal From Si-Fe Levitated Droplets

Numerical simulation of granular silicon growth and silicon fines formation process in polysilicon fluidized bed