Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells
Yinuo Zhou,Liping Zhang,Wenzhu Liu,Honghua Zhang,Shenglei Huang,Shihu Lan,Hui Zhao,Haoxin Fu,Anjun Han,Zhenfei Li,Kai Jiang,Xiangrui Yu,Dongming Zhao,Rui Li,Fanying Meng,Zhengxin Liu
DOI: https://doi.org/10.1016/j.solmat.2023.112652
IF: 6.9
2024-01-01
Solar Energy Materials and Solar Cells
Abstract:N-type hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) is potential to enhance the performance of silicon heterojunction solar cells, but the raised plasma damage on underlying layer during the nc-SiOx:H deposition with a high-volume fraction of hydrogen is a burning issue. The underlying intrinsic hydrogenated amorphous silicon (i-a-Si:H) bilayer between n-type crystalline silicon (c-Si) and n-type nc-SiOx:H has been investigated by modulating silane (SiH4) gas flow rate (GFR) of interface porous layer. It has been found that the initial H-rich ia-Si:H bilayer deposited by interfacial 1600 sccm GFR with relatively stable larger voids diameter and less voids number density can not only withstand hydrogen ions bombardment but also passivate c-Si surface well. Meanwhile, it also has been verified that the optimal n-seed deposition can further enhance both total hydrogen content and hydrogen content in compact structure to promote c-Si surface passivation and carrier transportation. The optimized SiH4 GFR for the interfacial i-a-Si:H growth and the appropriate deposition time of nseed layer have been applied into the front passivation layer of silicon heterojunction solar cells, thus a high efficiency of approximate 25 % with high VOC and FF has been achieved.