Abstract:We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

Ultrathin In2O3 nanowires with diameters below 4 nm: synthesis, reversible wettability switching behavior, and transparent thin-film transistor applications.

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin-Film Transistor Applications.

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Direct Integration of Vertical In2o3 Nanowire Arrays, Nanosheet Chains, and Photoinduced Reversible Switching of Wettability

High-performance Single-Crystalline Arsenic-Doped Indium Oxide Nanowires for Transparent Thin-Film Transistors and Active Matrix Organic Light-Emitting Diode Displays.

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Ultrathin W18O49 Nanowire Assemblies for Electrochromic Devices.

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Fully Transparent Thin-Film Transistor Devices Based on Sno2 Nanowires

Ultrathin In2O3thin-film transistors deposited from trimethylindium and ozone

Periodic Transparent Nanowires in ITO Film Fabricated Via Femtosecond Laser Direct Writing

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Fabrication and Optoelectronic Characterization of Suspended In2O3 Nanowire Transistors

UV Light Emitting Transparent Conducting Tin-Doped Indium Oxide (ITO) Nanowires

High-Performance Transparent Conducting Oxide Nanowires

C1jm13579a 17236..17241

Novel In2O3 nanostructures fabricated by controlling the kinetics factor for field emission display