Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility
Meng Wei,Xiao‐Lei Shi,Zhuang‐Hao Zheng,Fu Li,Wei‐Di Liu,Li‐Ping Xiang,Yang‐Su Xie,Yue‐Xing Chen,Jing‐Yi Duan,Hong‐Li Ma,Guang‐Xing Liang,Xiang‐Hua Zhang,Ping Fan,Zhi‐Gang Chen
DOI: https://doi.org/10.1002/adfm.202207903
IF: 19
2022-09-02
Advanced Functional Materials
Abstract:A high ZT of ≈1 at 453 K is achieved in an inorganic Sb2Te3/Te hybrid thin film via a novel directional thermal diffusion reaction growth method with extraordinary flexibility, and the rationally designed flexible device shows a high power density by a low‐temperature difference. Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb2Te3/Tex hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb2Te3, which optimizes the carrier density and leads to a significantly enhanced power factor of >20 μW cm–1 K–2, confirmed by both first‐principles calculations and experiments; while dense boundaries between Te and Sb2Te3 nanophases, contribute to the low thermal conductivity of ≈0.86 W m–1 K–1, both induce a high ZT of ≈1 in (Sb2Te3)(Te)1.5 at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb2Te3)(Te)1.5 thin films as p‐type legs and Bi2Te3 thin films as n‐type legs shows a high power density of >280 μW cm–2 at a temperature difference of 20 K, indicating a great potential for sustainably charging low‐power electronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology