An improved high speed charge pump in 90 nm CMOS technology

Sheng Chen,Zhiqun Li,Qin Li
DOI: https://doi.org/10.1109/ICCT.2011.6158051
2011-01-01
Abstract:This paper proposes an improved current steering charge pump in high speed application in IBM 90 nm technology. By using the current compensation circuit and accelerating acquisition circuit, the output voltage range with current matching is obviously enlarged. Simulation result shows that the charge pump can be applied for 500MHz frequency, with 1.4mW power consumption. Moreover, the current mismatch ratio of charge pump is less than 0.01% with output voltage swinging from 0.1 to 1.1V, very suitable for high speed PLL application.
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