Abstract:Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e. g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1: 8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10(-4) and 6 x 10(-5) if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm(2) (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

Cost-efficient built-in repair analysis for embedded memories with on-chip ECC

Cache RAM inductive fault analysis with fab defect modeling

Efficient Repair Analysis Algorithm Exploration for Memory with Redundancy and In-Memory ECC

Memory Built-In Self-Repair Method Based on Address Partitioning Strategy

Efficient built-in self-repair strategy for embedded SRAM with selectable redundancy

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

A built-in self-repair design for RAMs with 2-D redundancy

Design and Verification of SRAM Self-Detection Repair Based on ECC and BISR Circuit

Eliminating Timing Errors Through Collaborative Design to Maximize the Throughput

Leveraging Access Locality for the Efficient Use of Multibit Error-Correcting Codes in L2 Cache

An on-line BIST RAM architecture with self-repair capabilities

Built-In Self-Test Architecture Enabling Diagnosis for Massive Embedded Memory Banks in Large SoCs

On the Characterization and Optimization of On-Chip Cache Reliability Against Soft Errors

Realization of L2 Cache Defect Tolerance Using Multi-bit ECC

A new built-in self-repair approach to VLSI memory yield enhancement by using neural-type circuits

Improving 3D DRAM Fault Tolerance Through Weak Cell Aware Error Correction.

Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories

Design of Write Merging and Read Prefetching Buffer in DRAM Controller for Embedded Processor.

Enabling Effective Error Mitigation in Memory Chips That Use On-Die Error-Correcting Codes

Evaluating Built-in ECC of FPGA on-chip Memories for the Mitigation of Undervolting Faults

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips