Abstract:Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as the major advantages, STT-MRAM-based cache suffers from high error rates mainly due to retention failure, read disturbance, and write failure. Existing studies are limited to estimating the rate of only one or two of these error types for STT-MRAM cache. However, the overall vulnerability of STT-MRAM caches, which its estimation is a must to design cost-efficient reliable caches, has not been offered in any of previous studies. In this paper, we propose a system-level framework for reliability exploration and characterization of errors behavior in STT-MRAM caches. To this end, we formulate the cache vulnerability considering the inter-correlation of the error types including all three errors as well as the dependency of error rates to workloads behavior and Process Variations (PVs). Our analysis reveals that STT-MRAM cache vulnerability is highly workload-dependent and varies by orders of magnitude in different cache access patterns. Our analytical study also shows that this vulnerability divergence significantly increases by process variations in STT-MRAM cells. To evaluate the framework, we implement the error types in the gem5 full-system simulator, and the experimental results show that the total error rate in a shared LLC varies by 32.0x for different workloads. A further 6.5x vulnerability variation is observed when considering PVs in the STT-MRAM cells. In addition, the contribution of each error type in total LLC vulnerability highly varies in different cache access patterns and moreover, error rates are differently affected by PVs.

Cache RAM inductive fault analysis with fab defect modeling

MAXIMUM LIKELIHOOD ESTIMATION FOR FAILURE ANALYSIS OF SRAM CELLS USING INDUCTIVE FAULT ANALYSIS

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Modeling and Testing of Interference Faults in the Nano NAND Flash Memory

Architectural Exploration of Application-Specific Resonant SRAM Compute-in-Memory (rCiM)

Hardware Versus Software Fault Injection of Modern Undervolted SRAMs

IPF: In-Place X-Filling to Mitigate Soft Errors in SRAM-Based FPGAs.

System and Technology Co-optimization for RRAM Based Computation-in-memory Chip

Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs

Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing

Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark

A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches

A Compact Model for Relaxation Effect in Analog RRAM for Computation-in-Memory System Design and Benchmark

Cost-Aware Lifetime Yield Analysis of Heterogeneous 3D On-chip Cache

Modeling And Testing The Interconnect Resources Of Sram-Based Fpgas

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

An Architecture-Level Cache Simulation Framework Supporting Advanced PMA STT-MRAM

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

Automated Information Flow Analysis for Integrated Computing-in-Memory Modules

Hybrid CMOS/Memristor Circuit Design Methodology