Abstract:NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology scaling, and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to (1) fewer electrons in the flash memory cell (floating gate) to represent the data and (2) larger cell-to-cell interference and disturbance effects. Without mitigation, worsening reliability can reduce the lifetime of NAND flash memory. As a result, flash memory controllers in solid-state drives (SSDs) have become much more sophisticated: they incorporate many effective techniques to ensure the correct interpretation of noisy data stored in flash memory cells. In this article, we review recent advances in SSD error characterization, mitigation, and data recovery techniques for reliability and lifetime improvement. We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. Based on the understanding developed by the experimental characterization, we describe several mitigation and recovery techniques, including (1) cell-to-cell interference mitigation, (2) optimal multi-level cell sensing, (3) error correction using state-of-the-art algorithms and methods, and (4) data recovery when error correction fails. We quantify the reliability improvement provided by each of these techniques. Looking forward, we briefly discuss how flash memory and these techniques could evolve into the future.

Modeling and Testing of Interference Faults in the Nano NAND Flash Memory

Cache RAM inductive fault analysis with fab defect modeling

FPGA Implementation of NAND Flash Wear-Levelling Algorithm

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

FPGA-based Reliability Testing and Analysis for 3D NAND Flash Memory

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Channel Modeling and Quantization Design for 3D NAND Flash Memory

An improved method for test chip design

Architectural Techniques for Improving NAND Flash Memory Reliability

A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory

A novel test scheme for NAND flash memory based on built-in oscillator ring

Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Modeling 3D NAND Flash with Nonparametric Inference on Regression Coefficients for Reliable Solid-State Storage

Defects, Fault Modeling, and Test Development Framework for FeFETs

Scalable defect mapping and configuration of memory-based nanofabrics

A Novel Test Method for Metallic CNTs in CNFET-Based SRAMs.

Defect Tolerance for CNFET-based SRAMs

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Research on prediction model for NAND flash bit errors

ApproxFTL: on the Performance and Lifetime Improvement of 3-D NAND Flash-Based SSDs