Abstract:Since the inevitability in experimental synthesis, defects show great importance to many materials. They will deeply regulate the properties of the materials, and then affect the further applications. Thus, exploring the effects of defects on the properties of materials is desired. Here, by using first-principles calculations, we systematically studied the effect of silicon vacancy defects on the properties of silicene generated on Nterminated cubic boron nitride (111) surface. It is found that the introduction of silicon vacancy would trigger transition between half-metal and ferromagnetic semiconductor. With small vacancy ratios of 1/36 and 1/24, the ground-state of the samples would behave as ferromagnetic semiconductors, and the band gaps are about 1.25 and 0.95 eV, respectively. When the vacancy ratio is increased up to 1/6, the sample would turn into a ferromagnetic half-metal with a half-metallic gap of around 0.15 eV. The change of the electronic structure of the samples is driven by the different electron transfer between silicon layer and substrate, i.e., there will be different amount of electrons transferred from the silicon layer to the substrate when the vacancy ratio is altered. This work would open a new way to regulate the properties of materials and extend applications in nanoelectronic field.

First-principles study of the structural and electronic properties of armchair silicene nanoribbons with vacancies

Vacancy Dependent Structural, Electronic, and Magnetic Properties of Zigzag Silicene Nanoribbons:Co

Structural and Electronic Properties of Substitutionally Doped Armchair Silicene Nanoribbons

First-principles Study of Electronic Properties of F-terminated Silicon Nanoribbons

Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: an ab initio study

Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

The structural and electronic properties of silicon nanoribbons on Ag(110): A first principles study

Superlattice Structures of Silicene-Based Armchair Nanoribbons by Density Functional Theory Calculation

Structural and Electronic Properties of 90° Dislocations in Silicon Nanorods: A First-Principles Calculation

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Silicane Nanoribbons: Electronic Structure and Electric Field Modulation

Structural and Electronic Properties of a Single C Chain Doped Zigzag Silicene Nanoribbon

Tuning the Electronic and Magnetic Properties of the Si Nanoribbons Through Dangling Bond

Mechanical Properties of Armchair Silicene Nanoribbons with Edge Cracks: a Molecular Dynamics Study

Bandgap Modulations of Silicon Carbon Nanoribbons by Transverse Electric Fields: A Theoretical Study

Electronic Structures of Bc3 Nanoribbons

Effect of Structural Vacancies on Lattice Vibration, Mechanical, Electronic, and Thermodynamic Properties of Cr5BSi3

Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

First principles study of vacancies in Si

Spin caloritronics in armchair silicene nanoribbons with sp 3 and sp 2 -type alternating hybridizations.